公开(公告)号：JPH1167621A

公开(公告)日：1999-03-09

申请号：JP21519797

申请日：1997-08-08

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SE SHAKURYU

IPC: G03F7/039 ,  C08G73/00 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To prevent pattern registration errors and to improve overlay accuracy by forming a gate oxide layer, a conductive layer and a resist layer in sequence by lamination on a substrate and by forming an electrical charge dissipating layer including a specified conductive polymer on the resist layer. SOLUTION: A gate oxide layer is formed on a silicon substrate 10. A conductive layer such as polysilicon is formed on the gate oxide layer and is subjected to patterning for demarcating suitable gate electrodes for use in device manufacture. An electron-beam resist layer 12 is deposited on the conductive layer and an electrical charge dissipating layer 14 including a conductive polymer represented by a formula is deposited on the resist layer 12. In this case, R is acid in the formula. In this way, arising of pattern registration errors can be prevented and the overlay accuracy can be improved.

公开(公告)号：JPH11202470A

公开(公告)日：1999-07-30

申请号：JP7779698

申请日：1998-03-25

Applicant: UNITED MICROELECTRONICS CORP

Inventor： GO KOJIN ,  SE SHAKURYU

IPC: G03F1/68 ,  G03F1/76 ,  G03F1/78 ,  G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  G03F1/08 ,  H01J37/305

Abstract: PROBLEM TO BE SOLVED: To obtain a proximity effect correcting method used for manufacturing a mask obtained by combining both methods for correcting an electron beam proximity effect and a light proximity effect by calculating the light illuminance of an electronic beam required for correcting the electron beam proximity effect and the light proximity effect, executing electronic exposure operation by using a pattern corrected by the calculated result and manufacturing a photomask. SOLUTION: A computer aided design data collection forming the pattern on the mask is prepared. Then, a line 200 and a grid gate pattern 202 are included in the pattern. Next, the mask is divided into a first and a second patches according to the prepared pattern. Since the density of the pattern is related to the electron beam proximity effect and the contrast of light is related to the light proximity effect, the exposure of the electronic beam is adjusted by both of them so as to obtain the pattern whose proximity effects by the electronic beam and the light are corrected. By using the corrected pattern, the mask is formed by the proper exposure of the electron beam.