公开(公告)号：JPH1116847A

公开(公告)日：1999-01-22

申请号：JP15851097

申请日：1997-06-16

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SHA EIFUN

IPC: H01L21/265

Abstract: PROBLEM TO BE SOLVED: To provide a method for preventing defective structure of crystalline lattice generated at the process of ion implantation in a substrate or annealing. SOLUTION: A maximum angle θ between solid phase epitaxial regrowing ends is selected. A projection width of an ion implantation distance Rp into a substrate, a projected standard deviation ΔRp in the direction of a first axis and a projected standard deviation ΔY in the direction of a second axis are determined. An expression t=Rp+cosθ[ (ΔYsinθ) +(ΔRpcosθ) } ] is solved to obtain a minimum thickness t. After a surface layer 146 having the minimum thickness t has formed on the substrate, ion implantation is performed. A well 142 is formed for controlling the shape of the area of implantation.