公开(公告)号：US20180166574A1

公开(公告)日：2018-06-14

申请号：US15373378

申请日：2016-12-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kai-Lin Lee ,  Zhi-Cheng Lee ,  Chih-Chun Hu

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/66795 ,  H01L29/0847 ,  H01L29/6656 ,  H01L29/785

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first epitaxial layer adjacent to two sides of the gate structure; forming a patterned mask on the epitaxial layer; and using the patterned mask to remove part of the first epitaxial layer for forming a second epitaxial layer.