公开(公告)号：US20150137197A1

公开(公告)日：2015-05-21

申请号：US14608165

申请日：2015-01-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shyan-Liang Chou ,  Tsung-Min Kuo ,  Po-Wen Su ,  Chun-Mao Chiou ,  Feng-Mou Chen

IPC: H01L29/78 ,  H01L29/49

CPC classification number: H01L29/4983 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/7843

Abstract: A semiconductor structure includes a substrate, a gate electrode disposed on the substrate, wherein the gate electrode has a first top surface. Agate dielectric layer is disposed between the substrate and the gate electrode. A silicon carbon nitride spacer surrounds the gate electrode, wherein the silicon carbon nitride spacer has a second top surface not higher than the first top surface. A silicon oxide spacer surrounds the silicon carbon nitride spacer.

Abstract translation: 半导体结构包括衬底，设置在衬底上的栅电极，其中栅电极具有第一顶表面。 玛瑙电介质层设置在基板和栅电极之间。 硅碳氮化物间隔物环绕栅电极，其中硅氮化物间隔物具有不高于第一顶表面的第二顶表面。 硅氧化物间隔物包围硅氮化硅间隔物。

公开(公告)号：US09117904B2

公开(公告)日：2015-08-25

申请号：US14608165

申请日：2015-01-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shyan-Liang Chou ,  Tsung-Min Kuo ,  Po-Wen Su ,  Chun-Mao Chiou ,  Feng-Mou Chen

IPC: H01L29/76 ,  H01L29/78 ,  H01L29/49

CPC classification number: H01L29/4983 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/7843

Abstract: A semiconductor structure includes a substrate, a gate electrode disposed on the substrate, wherein the gate electrode has a first top surface. Agate dielectric layer is disposed between the substrate and the gate electrode. A silicon carbon nitride spacer surrounds the gate electrode, wherein the silicon carbon nitride spacer has a second top surface not higher than the first top surface. A silicon oxide spacer surrounds the silicon carbon nitride spacer.

Abstract translation: 半导体结构包括衬底，设置在衬底上的栅电极，其中栅电极具有第一顶表面。 玛瑙电介质层设置在基板和栅电极之间。 硅碳氮化物间隔物环绕栅电极，其中硅氮化物间隔物具有不高于第一顶表面的第二顶表面。 硅氧化物间隔物包围硅氮化硅间隔物。