公开(公告)号：US20140339652A1

公开(公告)日：2014-11-20

申请号：US14449157

申请日：2014-08-01

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Guang-Yaw Hwang ,  Chun-Hsien Lin ,  Hung-Ling Shih ,  Jiunn-Hsiung Liao ,  Zhi-Cheng Lee ,  Shao-Hua Hsu ,  Yi-Wen Chen ,  Cheng-Guo Chen ,  Jung-Tsung Tseng ,  Chien-Ting Lin ,  Tong-Jyun Huang ,  Jie-Ning Yang ,  Tsung-Lung Tsai ,  Po-Jui Liao ,  Chien-Ming Lai ,  Ying-Tsung Chen ,  Cheng-Yu Ma ,  Wen-Han Hung ,  Che-Hua Hsu

IPC: H01L29/51 ,  H01L29/49

CPC classification number: H01L29/517 ,  H01L21/28088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7845 ,  H01L29/7846

Abstract: A semiconductor device with oxygen-containing metal gates includes a substrate, a gate dielectric layer and a multi-layered stack structure. The multi-layered stack structure is disposed on the substrate. At least one layer of the multi-layered stack structure includes a work function metal layer. The concentration of oxygen in the side of one layer of the multi-layered stack structure closer to the gate dielectric layer is less than that in the side of one layer of the multi-layered stack structure opposite to the gate dielectric layer.

Abstract translation: 具有含氧金属栅极的半导体器件包括衬底，栅介质层和多层堆叠结构。 多层堆叠结构设置在基板上。 多层堆叠结构的至少一层包括功函数金属层。 更靠近栅介质层的多层堆叠结构的一层侧的氧的浓度小于与栅介质层相反的多层堆叠结构的一层的一侧的浓度。