公开(公告)号：US20160365245A1

公开(公告)日：2016-12-15

申请号：US14805639

申请日：2015-07-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ping-Wei Huang ,  Keng-Jen Lin ,  Yi-Hui Lin ,  Yu-Ren Wang

IPC: H01L21/02 ,  H01L29/06 ,  H01L21/3205

CPC classification number: H01L21/76224 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/32055 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for filling gaps of semiconductor device and a semiconductor device with insulation gaps formed by the same are provided. First, a silicon substrate with plural protruding portions is provided, and the protruding portions are spaced apart from each other by gaps with predetermined depths. A nitride-containing layer is formed above the silicon substrate for covering the protruding portions and surfaces of the gaps as a liner nitride. Then, an amorphous silicon layer is formed on the nitride-containing layer. An insulating layer is formed on the amorphous silicon layer, and the gaps are filled up with the insulating layer.

Abstract translation: 提供一种用于填充半导体器件的间隙的方法和具有由其形成的绝缘间隙的半导体器件。 首先，设置具有多个突出部的硅基板，并且突出部通过预定深度的间隙彼此间隔开。 在硅衬底之上形成含氮化物层，用于覆盖作为衬里氮化物的间隙的突出部分和表面。 然后，在含氮化物层上形成非晶硅层。 在非晶硅层上形成绝缘层，并用绝缘层填充间隙。

公开(公告)号：US09847247B2

公开(公告)日：2017-12-19

申请号：US15590114

申请日：2017-05-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ping-Wei Huang ,  Keng-Jen Lin ,  Yi-Hui Lin ,  Yu-Ren Wang

IPC: H01L29/06 ,  H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/32055 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for filling gaps of semiconductor device and a semiconductor device with insulation gaps formed by the same are provided. First, a silicon substrate with plural protruding portions is provided, and the protruding portions are spaced apart from each other by gaps with predetermined depths. A nitride-containing layer is formed above the silicon substrate for covering the protruding portions and surfaces of the gaps as a liner nitride. Then, an amorphous silicon layer is formed on the nitride-containing layer. An insulating layer is formed on the amorphous silicon layer, and the gaps are filled up with the insulating layer.

公开(公告)号：US09793174B1

公开(公告)日：2017-10-17

申请号：US15270000

申请日：2016-09-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ping-Wei Huang ,  Yu-Ren Wang ,  Keng-Jen Lin ,  Shu-Ming Yeh

IPC: H01L27/12 ,  H01L27/088 ,  H01L21/84 ,  H01L21/762 ,  H01L29/78

CPC classification number: H01L21/845 ,  H01L21/76224 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7853

Abstract: A fin field effect transistor (FinFET) on a silicon-on-insulator and method of forming the same are provided in the present invention. The FinFET includes first fin structure, second fin structure and an insulating layer. The first fin structure and the second fin structure are disposed on a substrate. The insulating layer covers the first fin structure and the second fin structure and exposes a first portion of the first fin structure and a second portion of the second fin structure. The first fin structure has a first height and the second fin structure has a second height different from the first height, and a top surface of the first fin structure and a top surface of the second fin structure are at different levels.

公开(公告)号：US20170243780A1

公开(公告)日：2017-08-24

申请号：US15590114

申请日：2017-05-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ping-Wei Huang ,  Keng-Jen Lin ,  Yi-Hui Lin ,  Yu-Ren Wang

IPC: H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/32055 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for filling gaps of semiconductor device and a semiconductor device with insulation gaps formed by the same are provided. First, a silicon substrate with plural protruding portions is provided, and the protruding portions are spaced apart from each other by gaps with predetermined depths. A nitride-containing layer is formed above the silicon substrate for covering the protruding portions and surfaces of the gaps as a liner nitride. Then, an amorphous silicon layer is formed on the nitride-containing layer. An insulating layer is formed on the amorphous silicon layer, and the gaps are filled up with the insulating layer.

公开(公告)号：US20250098238A1

公开(公告)日：2025-03-20

申请号：US18383035

申请日：2023-10-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ting Chiang ,  Tien-Shan Hsu ,  Po-Chang Lin ,  Lung-En Kuo ,  Hao-Che Feng ,  Ping-Wei Huang

IPC: H01L29/06 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a first fin-shaped structure and a second fin-shaped structure on a substrate, a bump between the first fin-shaped structure and the second fin-shaped structure, a first recess between the first fin-shaped structure and the bump, and a second recess between the second fin-shaped structure and the bump. Preferably, a top surface of the bump includes a curve concave upward, a width of the bump is greater than twice the width of the first fin-shaped structure, and a height of the bump is less than one fourth of the height of the first fin-shaped structure.

公开(公告)号：US09685319B2

公开(公告)日：2017-06-20

申请号：US14805639

申请日：2015-07-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ping-Wei Huang ,  Keng-Jen Lin ,  Yi-Hui Lin ,  Yu-Ren Wang

IPC: H01L29/06 ,  H01L21/02 ,  H01L21/3205 ,  H01L29/78

CPC classification number: H01L21/76224 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/32055 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for filling gaps of semiconductor device and a semiconductor device with insulation gaps formed by the same are provided. First, a silicon substrate with plural protruding portions is provided, and the protruding portions are spaced apart from each other by gaps with predetermined depths. A nitride-containing layer is formed above the silicon substrate for covering the protruding portions and surfaces of the gaps as a liner nitride. Then, an amorphous silicon layer is formed on the nitride-containing layer. An insulating layer is formed on the amorphous silicon layer, and the gaps are filled up with the insulating layer.