公开(公告)号：US11088285B2

公开(公告)日：2021-08-10

申请号：US16154644

申请日：2018-10-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Yen-Chen Chen ,  Jen-Po Huang ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Qinggang Xing ,  Ding-Lung Chen ,  Li Li Ding ,  Yao-Hung Liu

IPC: H01L29/76 ,  H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/423 ,  H01L29/49 ,  H01L29/10

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

公开(公告)号：US20230178657A1

公开(公告)日：2023-06-08

申请号：US18103505

申请日：2023-01-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Yen-Chen Chen ,  Jen-Po Huang ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Qinggang Xing ,  Ding-Lung Chen ,  Li Li Ding ,  Yao-Hung Liu

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/423 ,  H01L29/49 ,  H01L29/10

CPC classification number: H01L29/7869 ,  H01L29/66742 ,  H01L29/51 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/1037

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

公开(公告)号：US20210126131A1

公开(公告)日：2021-04-29

申请号：US17140114

申请日：2021-01-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Yen-Chen Chen ,  Jen-Po Huang ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Qinggang Xing ,  Ding-Lung Chen ,  Li Li Ding ,  Yao-Hung Liu

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/423 ,  H01L29/49 ,  H01L29/10

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

公开(公告)号：US12027629B2

公开(公告)日：2024-07-02

申请号：US18103505

申请日：2023-01-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Yen-Chen Chen ,  Jen-Po Huang ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Qinggang Xing ,  Ding-Lung Chen ,  Li Li Ding ,  Yao-Hung Liu

IPC: H01L29/786 ,  H01L29/10 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/1037 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/66742

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

公开(公告)号：US20210336059A1

公开(公告)日：2021-10-28

申请号：US17367637

申请日：2021-07-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Yen-Chen Chen ,  Jen-Po Huang ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Qinggang Xing ,  Ding-Lung Chen ,  Li Li Ding ,  Yao-Hung Liu

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/423 ,  H01L29/49 ,  H01L29/10

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

公开(公告)号：US11631771B2

公开(公告)日：2023-04-18

申请号：US17367637

申请日：2021-07-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Yen-Chen Chen ,  Jen-Po Huang ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Qinggang Xing ,  Ding-Lung Chen ,  Li Li Ding ,  Yao-Hung Liu

IPC: H01L29/76 ,  H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/423 ,  H01L29/49 ,  H01L29/10

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

公开(公告)号：US09608126B1

公开(公告)日：2017-03-28

申请号：US14953036

申请日：2015-11-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chia-Fu Hsu ,  Chun-Yuan Wu ,  Xu Yang Shen ,  Zhibiao Zhou ,  Qinggang Xing

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

Abstract: A semiconductor device and a method of fabricating the same, the semiconductor device includes a substrate, an interconnect structure, and an oxide semiconductor structure. The substrate has a first region and a second region. The interconnect structure is disposed on the substrate, in the first region. The oxide semiconductor structure is disposed over a hydrogen blocking layer, in the second region of the substrate.

公开(公告)号：US11342465B2

公开(公告)日：2022-05-24

申请号：US17140114

申请日：2021-01-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Yen-Chen Chen ,  Jen-Po Huang ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Qinggang Xing ,  Ding-Lung Chen ,  Li Li Ding ,  Yao-Hung Liu

IPC: H01L29/76 ,  H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/423 ,  H01L29/49 ,  H01L29/10

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

公开(公告)号：US20200083380A1

公开(公告)日：2020-03-12

申请号：US16154644

申请日：2018-10-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Yen-Chen Chen ,  Jen-Po Huang ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Qinggang Xing ,  Ding-Lung Chen ,  Li Li Ding ,  Yao-Hung Liu

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/10 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

公开(公告)号：US20180033891A1

公开(公告)日：2018-02-01

申请号：US15253908

申请日：2016-09-01

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： XIAODONG PU ,  Shao-Hui Wu ,  HAI BIAO YAO ,  Qinggang Xing ,  Chien-Ming Lai ,  Jun Zhu ,  Yu-Cheng Tung ,  ZHIBIAO ZHOU

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/41725 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78648

Abstract: An oxide semiconductor device includes an oxide semiconductor transistor and a protection wall. The protection wall extends in a vertical direction and surrounds the oxide semiconductor transistor. The oxide semiconductor transistor includes a first oxide semiconductor layer, and a bottom surface of the protection wall is lower than the first oxide semiconductor layer in the vertical direction. In the oxide semiconductor device of the present invention, the protection wall is used to surround the oxide semiconductor transistor for improving the ability of blocking environment substances from entering the oxide semiconductor transistor. The electrical stability and product reliability of the oxide semiconductor device are enhanced accordingly.