公开(公告)号：US10438893B2

公开(公告)日：2019-10-08

申请号：US15784180

申请日：2017-10-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shih-Hsien Chen ,  Meng-Jun Wang ,  Ting-Chun Wang ,  Chih-Sheng Chang

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/311 ,  H01L21/02 ,  H01L23/528 ,  H01L23/522

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first inter-metal dielectric (IMD) layer thereon; forming a first metal interconnection and a second metal interconnection in the first IMD layer; removing part of the first IMD layer to form a recess between the first metal interconnection and the second metal interconnection; performing a curing process; and forming a second IMD layer on the first metal interconnection and the second metal interconnection.

公开(公告)号：US20190096819A1

公开(公告)日：2019-03-28

申请号：US15784180

申请日：2017-10-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shih-Hsien Chen ,  Meng-Jun Wang ,  Ting-Chun Wang ,  Chih-Sheng Chang

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/311 ,  H01L21/02 ,  H01L23/528

CPC classification number: H01L23/53295 ,  H01L21/02115 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/7682 ,  H01L21/76828 ,  H01L21/76832 ,  H01L21/7685 ,  H01L21/76895 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/53228

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first inter-metal dielectric (IMD) layer thereon; forming a first metal interconnection and a second metal interconnection in the first IMD layer; removing part of the first IMD layer to form a recess between the first metal interconnection and the second metal interconnection; performing a curing process; and forming a second IMD layer on the first metal interconnection and the second metal interconnection.