公开(公告)号：US10529837B1

公开(公告)日：2020-01-07

申请号：US16120296

申请日：2018-09-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ching-Wen Hung ,  Meng-Chi Chiang ,  Yen-Chih Lin

IPC: H01L29/737 ,  H01L29/739 ,  H01L29/08 ,  H01L29/423 ,  H01L29/417 ,  H01L29/10

Abstract: A bipolar junction transistor (BJT) includes an emitter region, abase region on one side of the emitter region, and a collector region on the other side of the base region. The emitter region includes first fins extending along a first direction, a first metal gate extending across the first fins along a second direction, a second metal gate in parallel with the first metal gate, and an emitter contact plug on the first fins between the first metal gate and the second metal gate. The base region includes second fins extending along the first direction, the first metal gate and the second metal gate extending across the second fins along the second direction, and a base contact plug on the second fins between the first metal gate and the second metal gate. The emitter contact plug is aligned with the base contact plug.