公开(公告)号：US10103265B1

公开(公告)日：2018-10-16

申请号：US15696187

申请日：2017-09-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhi-Cheng Lee ,  Kai-Lin Lee ,  Yi-Che Yen

IPC: H01L29/78 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3105

Abstract: A CMOS device is disclosed, including a plurality of active regions having a length along a first direction, wherein the active regions are arranged end-to-end along the first direction and are separated by an isolation structure. A recessed region is formed in the isolation structure between the adjacent terminals of the each pair of neighboring active regions and is completely filled by an interlayer dielectric layer, wherein the interlayer dielectric layer comprises a stress.