公开(公告)号：US10128366B2

公开(公告)日：2018-11-13

申请号：US15890303

申请日：2018-02-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ying Lin ,  Kuan Hsuan Ku ,  I-Cheng Hu ,  Chueh-Yang Liu ,  Shui-Yen Lu ,  Yu Shu Lin ,  Chun Yao Yang ,  Yu-Ren Wang ,  Neng-Hui Yang

IPC: H01L21/00 ,  H01L29/78 ,  H01L21/225 ,  H01L29/06 ,  H01L21/768 ,  H01L21/311 ,  H01L29/417 ,  H01L29/165 ,  H01L27/092

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure formed over the semiconductor substrate, and an epitaxial structure formed partially within the semiconductor substrate. The gate structure includes a gate dielectric layer formed over the semiconductor substrate, a gate electrode formed over the gate dielectric layer, and a spacer formed on side surfaces of the gate dielectric layer and the gate electrode. A laterally extending portion of the epitaxial structure extends laterally at an area below a top surface of the semiconductor substrate in a direction toward an area below the gate structure. A lateral end of the laterally extending portion is below the spacer.

公开(公告)号：US20160276434A1

公开(公告)日：2016-09-22

申请号：US15166271

申请日：2016-05-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun Jen Chen ,  Bin-Siang Tsai ,  Tsai-Yu Wen ,  Yu Shu Lin ,  Chin-Sheng Yang

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L29/41

CPC classification number: H01L29/0676 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02587 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02664 ,  H01L21/76224 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/165 ,  H01L29/413 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/785 ,  H01L2029/7858

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate; a first nanowire disposed over the substrate; a second nanowire disposed over the substrate; a first pad formed at first ends of the first and second nanowires, a second pad formed at second ends of the first and second nanowires, wherein the pads comprise different materials than the nanowires; and a gate surrounding at least a portion of each of the first and second nanowires.

Abstract translation: 提供半导体器件。 半导体器件包括衬底; 设置在衬底上的第一纳米线; 设置在衬底上的第二纳米线; 形成在第一和第二纳米线的第一端处的第一焊盘，形成在第一和第二纳米线的第二端处的第二焊盘，其中焊盘包括与纳米线不同的材料; 以及围绕第一和第二纳米线的每一个的至少一部分的栅极。

公开(公告)号：US09653549B2

公开(公告)日：2017-05-16

申请号：US15166271

申请日：2016-05-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun Jen Chen ,  Bin-Siang Tsai ,  Tsai-Yu Wen ,  Yu Shu Lin ,  Chin-Sheng Yang

IPC: H01L29/66 ,  H01L29/06 ,  H01L21/02 ,  H01L29/423 ,  H01L29/78 ,  H01L29/165 ,  H01L29/775 ,  H01L29/41

CPC classification number: H01L29/0676 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02587 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02664 ,  H01L21/76224 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/165 ,  H01L29/413 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/785 ,  H01L2029/7858

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate; a first nanowire disposed over the substrate; a second nanowire disposed over the substrate; a first pad formed at first ends of the first and second nanowires, a second pad formed at second ends of the first and second nanowires, wherein the pads comprise different materials than the nanowires; and a gate surrounding at least a portion of each of the first and second nanowires.