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1.
公开(公告)号:WO1997016850A1
公开(公告)日:1997-05-09
申请号:PCT/US1996017346
申请日:1996-10-30
Applicant: UNITED TECHNOLOGIES CORPORATION
IPC: H01L23/525
CPC classification number: H01L23/5252 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
Abstract: An antifuse (89) may include one of more interfacial oxide film layers (84) surrounding an antifuse dielectric layer (86) to provide narrowing of the antifuse programming voltage distribution and to improve the antifuse yield and long term reliability.
Abstract translation: 反熔丝(89)可以包括围绕反熔丝电介质层(86)的更多界面氧化物膜层(84)之一,以提供反熔丝编程电压分布变窄并提高反熔丝产率和长期可靠性。
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公开(公告)号:EP0858675A1
公开(公告)日:1998-08-19
申请号:EP96937802.0
申请日:1996-10-30
Applicant: UNITED TECHNOLOGIES CORPORATION
Inventor: HUMPHREY, Kurt, D. , HOLWAY, Bradley, S. , HAFER, Craig
CPC classification number: H01L23/5252 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
Abstract: An antifuse (89) may include one of more interfacial oxide film layers (84) surrounding an antifuse dielectric layer (86) to provide narrowing of the antifuse programming voltage distribution and to improve the antifuse yield and long term reliability.
Abstract translation: 反熔丝(89)可以包括围绕反熔断电介质层(86)的多个界面氧化物膜层(84)中的一个,以提供反熔丝编程电压分布的变窄并且提高反熔丝产量和长期可靠性。
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