公开(公告)号：WO1994018353A1

公开(公告)日：1994-08-18

申请号：PCT/US1993011585

申请日：1993-11-30

Applicant: UNITED TECHNOLOGIES CORPORATION

Inventor： UNITED TECHNOLOGIES CORPORATION ,  VELTRI, Richard, D.

IPC: C23C16/34

CPC classification number: C23C16/345 ,  C23C16/4404 ,  Y10S427/10

Abstract: CVD Si3N4 can be made by placing a substrate (2) inside a CVD reactor (4) having an interior and interior walls (6). The interior walls (6) of the reactor (4) include a high temperature metal selected from the group consisting of Mo, Nb, Rh, Hf, Ta, W, Re, Ir, and alloys that comprise more than 50 atomic percent of Mo, Nb, Rh, Hf, Ta, W, Re, or Ir. An inert gas is flowed through the reactor (4) and the pressure inside the reactor (4) is reduced to less than about 40 KPa. The substrate (2) and interior of the reactor (4) are heated to a temperature between about 1200 DEG C and about 1700 DEG C. A reactant gas mixture of a silicon halide and an excess of a nitrogen-containing compound is flowed into the reactor (4) such that the silicon halide reacts with the nitrogen-containing compound to form Si3N4. The high temperature metal on the interior walls (6) of the reactor (4) inhibits the formation of Si3N4 on the interior walls (6) of the reactor (4) so the majority of the Si3N4 forms on the substrate (2).

Abstract translation: 可以通过将衬底（2）放置在具有内壁和内壁（6）的CVD反应器（4）内部来制造CVD Si 3 N 4。 反应器（4）的内壁（6）包括选自由Mo，Nb，Rh，Hf，Ta，W，Re，Ir组成的组的高温金属，以及包含大于50原子％的Mo ，Nb，Rh，Hf，Ta，W，Re或Ir。 惰性气体流过反应器（4），并且反应器（4）内部的压力降低到小于约40KPa。 将基材（2）和反应器（4）的内部加热至约1200至约1700℃的温度。将卤化硅和过量的含氮化合物的反应气体混合物流入 反应器（4），使得卤化硅与含氮化合物反应形成Si 3 N 4。 反应器（4）的内壁（6）上的高温金属抑制在反应器（4）的内壁（6）上形成Si 3 N 4，因此大部分Si 3 N 4形成在基板（2）上。

公开(公告)号：EP0682718B1

公开(公告)日：1997-04-16

申请号：EP94904809.4

申请日：1993-11-30

Applicant: UNITED TECHNOLOGIES CORPORATION

Inventor： VELTRI, Richard, D.

IPC: C23C16/34 ,  C23C16/30 ,  C23C16/44

CPC classification number: C23C16/345 ,  C23C16/4404 ,  Y10S427/10

Abstract: CVD Si3N4 can be made by placing a substrate (2) inside a CVD reactor (4) having an interior and interior walls (6). The interior walls (6) of the reactor (4) include a high temperature metal selected from the group consisting of Mo, Nb, Rh, Hf, Ta, W, Re, Ir, and alloys that comprise more than 50 atomic percent of Mo, Nb, Rh, Hf, Ta, W, Re, or Ir. An inert gas is flowed through the reactor (4) and the pressure inside the reactor (4) is reduced to less than about 40 KPa. The substrate (2) and interior of the reactor (4) are heated to a temperature between about 1200 °C and about 1700 °C. A reactant gas mixture of a silicon halide and an excess of a nitrogen-containing compound is flowed into the reactor (4) such that the silicon halide reacts with the nitrogen-containing compound to form Si3N4. The high temperature metal on the interior walls (6) of the reactor (4) inhibits the formation of Si3N4 on the interior walls (6) of the reactor (4) so the majority of the Si3N4 forms on the substrate (2).

公开(公告)号：EP0682718A1

公开(公告)日：1995-11-22

申请号：EP94904809.0

申请日：1993-11-30

Applicant: UNITED TECHNOLOGIES CORPORATION

Inventor： VELTRI, Richard, D.

IPC: C23C16

CPC classification number: C23C16/345 ,  C23C16/4404 ,  Y10S427/10

Abstract: CVD Si3N4 can be made by placing a substrate (2) inside a CVD reactor (4) having an interior and interior walls (6). The interior walls (6) of the reactor (4) include a high temperature metal selected from the group consisting of Mo, Nb, Rh, Hf, Ta, W, Re, Ir, and alloys that comprise more than 50 atomic percent of Mo, Nb, Rh, Hf, Ta, W, Re, or Ir. An inert gas is flowed through the reactor (4) and the pressure inside the reactor (4) is reduced to less than about 40 KPa. The substrate (2) and interior of the reactor (4) are heated to a temperature between about 1200 DEG C and about 1700 DEG C. A reactant gas mixture of a silicon halide and an excess of a nitrogen-containing compound is flowed into the reactor (4) such that the silicon halide reacts with the nitrogen-containing compound to form Si3N4. The high temperature metal on the interior walls (6) of the reactor (4) inhibits the formation of Si3N4 on the interior walls (6) of the reactor (4) so the majority of the Si3N4 forms on the substrate (2).