公开(公告)号：WO2016171766A1

公开(公告)日：2016-10-27

申请号：PCT/US2015/065129

申请日：2015-12-10

Applicant: UNIVERSITY OF HOUSTON SYSTEM

Inventor： REN, Zhifeng ,  LIU, Weishu

IPC: H01L35/34 ,  H01L35/02 ,  H01L35/14 ,  H01L35/16 ,  H01L35/18

CPC classification number: H01L35/20 ,  C01B19/002 ,  H01L35/08 ,  H01L35/16 ,  H01L35/18 ,  H01L35/22 ,  H01L35/34

Abstract: Systems and methods of manufacturing thermoelectric devices comprising at least one electrical contact fabricated using hot-pressing to increase the bonding strength at the contact interface(s) and reducing the contact resistance. The hot pressed component may include a first and a second metallic layer each in contact with a thermoelectric layer, and where a contact resistance between the first metallic layer and the thermoelectric layer or between the second metallic layer and the thermoelectric layer is less than about 10 μΩ cm 2 . When interlayers are employed in a thermoelectric device, first hot pressed contact interface is formed between the thermoelectric layer and the first interlayer and a second hot pressed contact interface is formed between the thermoelectric layer and the second interlayer, and at least one of the first and the second hot pressed contact interfaces comprises a bonding strength of at least 16 MPa.

Abstract translation: 制造热电器件的系统和方法包括使用热压制造的至少一个电接触以增加接触界面处的接合强度并降低接触电阻。 热压部件可以包括与热电层接触的第一和第二金属层，并且其中第一金属层和热电层之间或第二金属层与热电层之间的接触电阻小于约10 μΩcm2。 当在热电装置中使用中间层时，在热电层和第一中间层之间形成第一热压接触界面，并且在热电层和第二中间层之间形成第二热压接触界面，并且第一和第 第二热压接触界面包括至少16MPa的结合强度。

公开(公告)号：WO2016130205A1

公开(公告)日：2016-08-18

申请号：PCT/US2015/065119

申请日：2015-12-10

Applicant: UNIVERSITY OF HOUSTON SYSTEM

Inventor： REN, Zhifeng ,  LIU, Weishu

IPC: H01L35/12 ,  H01L35/34 ,  H01L35/16 ,  H01L35/18

CPC classification number: H01L35/26 ,  B22F3/14 ,  B22F3/24 ,  B22F9/04 ,  B22F2003/248 ,  B22F2009/043 ,  B22F2301/30 ,  B22F2998/10 ,  C22C1/04 ,  C22C1/0408 ,  C22C1/0483 ,  C22C13/00 ,  C22C23/00 ,  H01L35/16 ,  H01L35/22 ,  H01L35/34

Abstract: Discussed herein are systems and methods for fabrication of MgSnGe-based thermoelectric materials for applications from room temperature and near room temperature to high temperature applications. The TE materials may be fabricated by hand or ball milling a powder to a predetermined particle size and hot-pressing the milled powder to form a thermoelectric component with desired properties including a figure of merit ( ZT ) over a temperature range. The TE materials fabricated may be disposed in thermoelectric devices for varying applications.

Abstract translation: 这里讨论的是用于制备用于从室温和接近室温到高温应用的MgSnGe的热电材料的系统和方法。 TE材料可以通过手工或球磨将粉末制成预定的粒度并热压研磨的粉末以形成具有包括在温度范围内的品质因数（ZT）的所需性质的热电组分。 所制造的TE材料可以设置在用于不同应用的热电装置中。