Semiconductor-Graphene Hybrids Formed Using Solution Growth
    1.
    发明申请
    Semiconductor-Graphene Hybrids Formed Using Solution Growth 有权
    使用溶液生长形成的半导体 - 石墨烯混合物

    公开(公告)号:US20130099196A1

    公开(公告)日:2013-04-25

    申请号:US13655656

    申请日:2012-10-19

    Inventor: JUDY WU JIANWEI LIU

    Abstract: A novel method for fabrication of hybrid semiconductor-graphene nanostructures in large scale by floating graphene sheets on the surface of a solution is provided. Using this approach, crystalline ZnO nano/micro-rod bundles on graphene fabricated using chemical vapor deposition were prepared. UV detectors fabricated using the as-prepared hybrid ZnO-graphene nano-structure with graphene being one of the two electrodes show high sensitivity to ultraviolet light, suggesting the graphene remained intact during the ZnO growth. This growth process provides a low-cost and robust scheme for large-scale fabrication of semiconductor nanostructures on graphene and may be applied for synthesis of a variety of hybrid semiconductor-graphene nano-structures demanded for optoelectronic applications including photovoltaics, photodetection, and photocatalysis.

    Abstract translation: 提供了一种通过在溶液表面上浮置的石墨烯薄片大量制造混合半导体 - 石墨烯纳米结构的新方法。 使用这种方法,制备了使用化学气相沉积制造的石墨烯上的结晶ZnO纳米/微棒束。 使用制备的混合ZnO-石墨烯纳米结构制备的UV检测器,石墨烯是两个电极之一,对紫外光显示出高灵敏度,表明在ZnO生长期间石墨烯保持完整。 该生长工艺为石墨烯上的半导体纳米结构的大规模制造提供了一种低成本和可靠的方案,并可用于合成需要用于包括光伏,光电检测和光催化的光电子应用的各种混合半导体 - 石墨烯纳米结构。

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