公开(公告)号：US11961934B2

公开(公告)日：2024-04-16

申请号：US17343048

申请日：2021-06-09

Applicant: UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING

Inventor： Yinghui Sun ,  Bingxu Liu ,  Rongming Wang

IPC: H01L31/109 ,  H01L31/0336 ,  H01L31/18

CPC classification number: H01L31/109 ,  H01L31/03365 ,  H01L31/1828

Abstract: In the field of photoelectric devices, a visible light detector is provided with high-photoresponse based on a TiO2/MoS2 heterojunction and a preparation method thereof. The detector, based on a back-gated field-effect transistor based on MoS2, includes a MoS2 channel, a TiO2 modification layer, a SiO2 dielectric layer, Au source/drain electrodes and a Si gate electrode, The TiO2 modification layer is modified on the surface of the MoS2 channel. By employing micromechanical exfoliation and site-specific transfer of electrodes, the method is intended to prepare a detector by constructing a back-gated few-layer field-effect transistor based on MoS2, depositing Ti on the channel surface, and natural oxidation.