公开(公告)号：US20240088240A1

公开(公告)日：2024-03-14

申请号：US18271919

申请日：2021-01-14

Applicant: UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Xianhui Chen ,  Bin Lei ,  Donghui Ma ,  Shihao Liu

IPC: H01L29/417 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L29/41733 ,  H01L21/02172 ,  H01L21/02266 ,  H01L21/3065

Abstract: Provided is a new solid oxygen ionic conductor based field-effect transistor and its manufacturing method. The field-effect transistor includes: a substrate; a gate dielectric layer located on the substrate, where the gate dielectric layer is a solid oxygen ionic conductor thin film; a channel layer covered on a part of the gate dielectric layer; and a source electrode and a drain electrode respectively located on the gate dielectric layer not covered by the channel layer and on a part of the channel layer.