公开(公告)号：US20240079478A1

公开(公告)日：2024-03-07

申请号：US18344625

申请日：2023-06-29

Applicant: UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Guangwei XU ,  Qiming HE ,  Xuanze ZHOU ,  Qiuyan LI ,  Xiaolong ZHAO ,  Shibing LONG

IPC: H01L29/66 ,  H01L21/477 ,  H01L29/872

CPC classification number: H01L29/66969 ,  H01L21/477 ,  H01L29/872

Abstract: A preparation method of a gallium oxide device based on high-temperature annealing technology and a gallium oxide device are provided. The preparation method includes: preparing a first barrier layer on a surface of a gallium oxide wafer to block an oxygen atmosphere; implementing a patterning process for regulating impurities of the gallium oxide wafer on the barrier layer, a process depth of the patterning process not exceeding a thickness of the barrier layer; annealing the gallium oxide wafer subjected to above treatment in the oxygen atmosphere; removing the barrier layer; and removing a surface layer of the gallium oxide wafer with the barrier layer lifted off. Problems that a local region of a gallium oxide material cannot be treated alone and net carrier concentration in a selective region of the gallium oxide material cannot be regulated with high-temperature annealing technology in the oxygen atmosphere in related art are solved.

公开(公告)号：US20240079477A1

公开(公告)日：2024-03-07

申请号：US18216425

申请日：2023-06-29

Applicant: UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Xuanze ZHOU ,  Guangwei XU ,  Shibing LONG

IPC: H01L29/66 ,  H01L21/425 ,  H01L21/443 ,  H01L21/465 ,  H01L21/477 ,  H01L29/24 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/425 ,  H01L21/443 ,  H01L21/465 ,  H01L21/477 ,  H01L29/24 ,  H01L29/78642 ,  H01L29/7869

Abstract: A vertical gallium oxide transistor and a preparation method thereof are provided. The method includes: annealing a gallium oxide material in an oxygen atmosphere at a range of temperature of 1000 to 1400° C. for 1 to 24 h so as to form a single crystal layer, a defective layer and an oxidized layer; removing the defective layer and the oxidized layer on a back of the gallium oxide material and the defective layer on a front of the gallium oxide material so as to obtain an initial sample; and preparing a heavily doped contact layer on the oxidized layer, preparing a source electrode layer on the contact layer, and preparing a trench perpendicular to a plane of the sample, and preparing a gate dielectric layer in the trench to fabricate a gate electrode and a drain electrode.