公开(公告)号：US20240093345A1

公开(公告)日：2024-03-21

申请号：US18250396

申请日：2020-11-30

Applicant: UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Mengqi Wang ,  Ya Wang ,  Haoyu Sun ,  Xiangyu Ye ,  Pei Yu ,  Hangyu Liu ,  Pengfei Wang ,  Fazhan Shi ,  Jiangfeng Du

IPC: C23C14/04 ,  C23C14/48

CPC classification number: C23C14/042 ,  C23C14/48 ,  G01D5/268

Abstract: The present disclosure provides a fixed-position defect doping method for a micro-nanostructure based on a self-alignment process, including: S1, sequentially forming a sacrificial layer and a photoresist layer on a surface of a crystal substrate; S2, performing a lithography on the photoresist layer to form a mask hole according to a micro-nano pattern; S3, performing an isotropic etching on the sacrificial layer through the mask hole, and amplifying the micro-nano pattern to the sacrificial layer; S4, performing an ion implantation doping on an exposed crystal surface below the mask hole; S5, removing the photoresist layer, and depositing a mask material; S6, removing the sacrificial layer, and transferring a micro-nano amplified pattern in the sacrificial layer to a mask material pattern; and S7, etching an exposed crystal surface, and removing the mask material on the surface and forming a specific defect by annealing.