公开(公告)号：US20240243725A1

公开(公告)日：2024-07-18

申请号：US18562534

申请日：2021-06-21

Applicant: UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Chengjie ZUO ,  Fuhong LIN ,  Ziying WU ,  Kai YANG

IPC: H03H9/25 ,  H03H3/10 ,  H03H9/02

CPC classification number: H03H9/25 ,  H03H3/10 ,  H03H9/02834

Abstract: The present disclosure provides an acoustic resonator based on a high crystallinity doped piezoelectric thin film, including: a substrate; a seed layer arranged on the substrate, wherein the substrate and the seed layer form a Bragg reflection structure; a doped layer arranged on the seed layer; and a metal electrode arranged on the doped layer; wherein the seed layer is configured to increase a lattice matching degree between the doped layer and the substrate, and configured to reflect a sound wave emitted by the doped layer. The present disclosure further provides a method for preparing the acoustic resonator described above.