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1.发明授权公开(公告)号：US11002758B2
公开(公告)日：2021-05-11
申请号：US16095011
申请日：2017-04-24
Applicant: UNM RAINFOREST INNOVATIONS
Inventor： Steven R. J. Brueck , Daniel Feezell , John Randall , Tito Busani , Joshua B. Ballard , Mahmoud Behzadirad , Ashwin Krishnan Rishinaramangalam
Abstract: Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning, tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.
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公开(公告)号：US12255265B2
公开(公告)日：2025-03-18
申请号：US17780689
申请日：2020-11-27
Applicant: UNM RAINFOREST INNOVATIONS
Inventor： Tito Busani , Daniel Feezell , Mahmoud Behzadirad , Morteza Monavarian , Saadat Mishkat-Ul-Masabih
IPC: H01L33/10 , H01L33/00 , H01L33/02 , H01L33/08 , H01L33/12 , H01L33/18 , H01L33/24 , H01S5/125 , H01S5/34
Abstract: A method for making a device. The method comprises forming a buffer layer on a substrate; forming a periodically doped layer on the buffer layer; forming one or more wires on the periodically doped layer, the wires being chosen from nanowires and microwires; and introducing porosity into the periodically doped layer to form a porous distributed Bragg reflector (DBR). Various devices that can be made by the method are also disclosed.
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3.发明授权公开(公告)号：US12078654B2
公开(公告)日：2024-09-03
申请号：US17237697
申请日：2021-04-22
Applicant: UNM RAINFOREST INNOVATIONS
Inventor： Steven R. J. Brueck , Daniel Feezell , John Randall , Tito Busani , Joshua B. Ballard , Mahmoud Behzadirad , Ashwin Krishnan Rishinaramangalam
CPC classification number: G01Q60/16 , B82B3/0004 , G01Q70/06 , G01Q70/10 , G01Q70/14 , G01Q80/00 , G03F7/0002 , G01Q70/12
Abstract: Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.
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