公开(公告)号：US10274376B2

公开(公告)日：2019-04-30

申请号：US15968758

申请日：2018-05-02

Applicant: University of Electronic Science and Technology of China

Inventor： Ziji Liu ,  Shengchen Zhao ,  Zhiqing Liang ,  Hongbo Zhang ,  Tao Wang ,  Yadong Jiang

IPC: G01J5/52 ,  G01J5/10 ,  G01R31/265 ,  G01J5/00

Abstract: A system for testing thermal response time of an uncooled infrared focal plane detector array and a method therefor is provided. The system comprises: a blackbody, a chopper, a detector unit under test and a testing system. The method comprises: emitting radiation by the blackbody, chopping by the chopper, then radiating the radiation to the uncooled infrared focal plane detector array under test; generating different responses on the radiation at different chopping frequencies by the uncooled infrared focal plane detector array under test; collecting different response values of the uncooled infrared focal plane detector array under test at different chopping frequencies; obtaining response amplitude at a corresponding frequency in a frequency domain by FFT; fitting according to a formula Rv ⁡ ( f ) = Rv ⁡ ( 0 ) 1 + ( 2 ⁢ π ⁢ ⁢ f ⁢ ⁢ τ ) 2 to obtain the thermal response time.

公开(公告)号：US09481926B2

公开(公告)日：2016-11-01

申请号：US14880148

申请日：2015-10-09

Applicant: University of Electronic Science and Technology of China

Inventor： Deen Gu ,  Tao Wang ,  Yadong Jiang

IPC: C23C14/08 ,  C23C14/35 ,  C23C14/00 ,  C23C14/34 ,  H01B1/02 ,  C23C14/58 ,  C01G31/02

CPC classification number: C23C14/083 ,  C01G31/02 ,  C23C14/0036 ,  C23C14/3464 ,  C23C14/35 ,  C23C14/352 ,  C23C14/58 ,  C23C14/5853 ,  H01B1/02

Abstract: A vanadium oxide thermo-sensitive film material with a high temperature coefficient of resistance (TCR) contains a rare earth element of Yttrium serving as a dopant in a preparation process. The vanadium oxide thermo-sensitive film material includes a substrate and a yttrium-doped vanadium oxide film layer. The yttrium-doped vanadium oxide film layer includes three elements of vanadium, oxygen and yttrium, wherein the atomic concentration of yttrium is at a range of 1%-8%, the atomic concentration of vanadium is at a range of 20-40% and the residue is oxygen. The method for preparing the vanadium oxide thermo-sensitive film material with high TCR includes a reactive magnetron sputtering method using a low-concentration yttrium-vanadium alloy target as a sputtering source or a reactive magnetron co-sputtering method using dual targets including a high-concentration yttrium-vanadium alloy target and a pure vanadium target as a co-sputtering source.

Abstract translation: 具有高耐温性（TCR）的氧化钒热敏膜材料在制备过程中含有作为掺杂剂的钇的稀土元素。 氧化钒热敏膜材料包括基底和掺杂钇的钒氧化物膜层。 钇掺杂钒氧化物膜层包括钒，氧和钇的三种元素，其中钇的原子浓度在1％-8％的范围内，钒的原子浓度在20-40％的范围内， 残留物是氧气。 制备具有高TCR的钒氧化物热敏膜材料的方法包括使用低浓度钇钒合金靶作为溅射源的反应性磁控管溅射法或使用包括高分子量的双靶的反应性磁控管共溅射法， 浓度钇钒合金靶和纯钒靶作为共溅射源。

公开(公告)号：US20160032443A1

公开(公告)日：2016-02-04

申请号：US14880148

申请日：2015-10-09

Applicant: University of Electronic Science and Technology of China

Inventor： Deen Gu ,  Tao Wang ,  Yadong Jiang

IPC: C23C14/08 ,  H01B1/02 ,  C23C14/34 ,  C23C14/35 ,  C23C14/00

CPC classification number: C23C14/083 ,  C01G31/02 ,  C23C14/0036 ,  C23C14/3464 ,  C23C14/35 ,  C23C14/352 ,  C23C14/58 ,  C23C14/5853 ,  H01B1/02

Abstract: A vanadium oxide thermo-sensitive film material with a high temperature coefficient of resistance (TCR) contains a rare earth element of Yttrium serving as a dopant in a preparation process. The vanadium oxide thermo-sensitive film material includes a substrate and a yttrium-doped vanadium oxide film layer. The yttrium-doped vanadium oxide film layer includes three elements of vanadium, oxygen and yttrium, wherein the atomic concentration of yttrium is at a range of 1%-8%, the atomic concentration of vanadium is at a range of 20-40% and the residue is oxygen. The method for preparing the vanadium oxide thermo-sensitive film material with high TCR includes a reactive magnetron sputtering method using a low-concentration yttrium-vanadium alloy target as a sputtering source or a reactive magnetron co-sputtering method using dual targets including a high-concentration yttrium-vanadium alloy target and a pure vanadium target as a co-sputtering source.

公开(公告)号：US20180252590A1

公开(公告)日：2018-09-06

申请号：US15968758

申请日：2018-05-02

Applicant: University of Electronic Science and Technology of China

Inventor： Ziji Liu ,  Shengchen Zhao ,  Zhiqing Liang ,  Hongbo Zhang ,  Tao Wang ,  Yadong Jiang

IPC: G01J5/52 ,  G01J5/10

CPC classification number: G01J5/522 ,  G01J5/10 ,  G01J2005/0048 ,  G01R31/2656

Abstract: A system for testing thermal response time of an uncooled infrared focal plane detector array and a method therefor is provided. The system comprises: a blackbody, a chopper, a detector unit under test and a testing system. The method comprises: emitting radiation by the blackbody, chopping by the chopper, then radiating the radiation to the uncooled infrared focal plane detector array under test; generating different responses on the radiation at different chopping frequencies by the uncooled infrared focal plane detector array under test; collecting different response values of the uncooled infrared focal plane detector array under test at different chopping frequencies; obtaining response amplitude at a corresponding frequency in a frequency domain by FFT; fitting according to a formula Rv  ( f ) = Rv  ( 0 ) 1 + ( 2  π   f   τ ) 2 to obtain the thermal response time.