公开(公告)号：US12021569B2

公开(公告)日：2024-06-25

申请号：US17272597

申请日：2019-08-30

Applicant: WASEDA UNIVERSITY

Inventor： Hiroshi Kawarada ,  Yutaro Iyama ,  Miki Kajiya ,  Kaito Tadenuma ,  Yukihiro Shintani

IPC: H04B13/02 ,  H04B1/04 ,  H04B1/16

CPC classification number: H04B13/02 ,  H04B1/04 ,  H04B1/1607

Abstract: The invention is to provide an underwater communication device and an underwater communication method that can be applied to mobile communication in water. An underwater communication device 10 includes: a transmitter 12 configured to transmit an electric signal; and a receiver 14 arranged away from the transmitter 12 via water and configured to receive the electric signal, in which the receiver 14 includes an field effect transistor 23 having a channel region 39 provided at a position in contact with the water, and a drive circuit 26 configured to generate a potential difference between a source region 31 and a drain region 33 of the field effect transistor 23.

公开(公告)号：US20220014279A1

公开(公告)日：2022-01-13

申请号：US17272597

申请日：2019-08-30

Applicant: WASEDA UNIVERSITY

Inventor： Hiroshi Kawarada ,  Yutaro Iyama ,  Miki Kajiya ,  Kaito Tadenuma ,  Yukihiro Shintani

IPC: H04B13/02 ,  H04B1/04 ,  H04B1/16

Abstract: The invention is to provide an underwater communication device and an underwater communication method that can be applied to mobile communication in water. An underwater communication device 10 includes: a transmitter 12 configured to transmit an electric signal; and a receiver 14 arranged away from the transmitter 12 via water and configured to receive the electric signal, in which the receiver 14 includes an field effect transistor 23 having a channel region 39 provided at a position in contact with the water, and a drive circuit 26 configured to generate a potential difference between a source region 31 and a drain region 33 of the field effect transistor 23.

公开(公告)号：US09373506B2

公开(公告)日：2016-06-21

申请号：US14467153

申请日：2014-08-25

Applicant: YOKOGAWA ELECTRIC CORPORATION ,  WASEDA UNIVERSITY

Inventor： Yukihiro Shintani ,  Toshiyuki Saruya ,  Hiroshi Kawarada

IPC: H01L29/15 ,  H01L21/04 ,  C23C16/27 ,  C23C16/56 ,  G01N27/414 ,  H01L21/3065 ,  H01L29/66

CPC classification number: H01L21/042 ,  C23C16/27 ,  C23C16/56 ,  G01N27/4145 ,  H01L21/3065 ,  H01L29/66045

Abstract: A method for treating a surface of a diamond thin film according to one aspect of the present invention performs one of a first substitution process for substituting part of hydrogen-terminals of a diamond thin film with fluorine-terminals in the absence of a fluorocarbon deposition on the surface of diamond thin film and a second substitution process for substituting part of hydrogen-terminals of a diamond thin film with fluorine-terminals in the presence of the fluorocarbon deposition on the surface of diamond thin film based on required surface properties of the diamond thin film.

Abstract translation: 根据本发明的一个方面的用于处理金刚石薄膜的表面的方法，在不存在碳氟化合物沉积的情况下进行用氟端子取代金刚石薄膜的一部分氢端子的第一取代过程 基于金刚石薄片的所需表面性质，在金刚石薄膜的表面上，在金刚石薄膜的表面上，在金刚石薄膜的表面上存在金刚石薄膜的表面和第二取代过程，用于在氟碳沉积的存在下用氟端子取代金刚石薄膜的一部分氢端子 电影。

公开(公告)号：US08815168B2

公开(公告)日：2014-08-26

申请号：US13791960

申请日：2013-03-09

Applicant: Honda Motor Co., Ltd. ,  Waseda University

Inventor： Hiroshi Kawarada ,  Toshiyuki Ohashi ,  Masahiro Ohta ,  Ryogo Kato ,  Toshio Tokune ,  Hidefumi Nikawa

IPC: B01J19/08 ,  C23C16/511

CPC classification number: B01J19/126 ,  B01J19/088 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C01P2002/82

Abstract: A carbon nanotube synthesizing apparatus in which the state of generated plasma can be stabilized is provided. A carbon nanotube synthesizing apparatus 1 comprises a chamber 2, an antenna 3 including a tip 3a, a microwave conductor 4, a gas introducing unit 5, a gas discharging unit 6, a substrate holding unit 7, and a heating unit 8. The shape of the inner wall of the chamber 2 is symmetrical with respect to the tip 3a of the antenna 3.

Abstract translation: 提供了一种碳纳管合成装置，其中产生的等离子体的状态能够稳定。 碳纳米管合成装置1包括室2，包括尖端3a的天线3，微波导体4，气体引入单元5，气体放电单元6，基板保持单元7和加热单元8。 室2的内壁相对于天线3的尖端3a对称。

公开(公告)号：US20230136477A1

公开(公告)日：2023-05-04

申请号：US17910325

申请日：2021-02-17

Applicant: WASEDA UNIVERSITY

Inventor： Hiroshi Kawarada ,  Wenxi Fei ,  Te Bi ,  Masayuki Iwataki

IPC: H01L29/66 ,  H01L29/16 ,  H01L21/02 ,  H01L21/04

Abstract: Provided are a diamond field effect transistor using a silicon oxide film as a gate insulating film including a silicon-terminated layer containing C—Si bonds in order to reduce an interface state density, and a method for producing the same. A FET 100A includes a silicon oxide film 3A formed on a surface of a non-doped diamond layer 2A, a non-doped diamond layer 4A formed on a surface of the non-doped diamond layer 2A using the silicon oxide film 3A as a mask, a silicon-terminated layer 5A formed at an interface between the non-doped diamond layer 2A and the silicon oxide film 3A and at an interface between the non-doped diamond layer 4A and the silicon oxide film 3A, and a gate electrode 12A formed on the silicon oxide film 3A. The FET 100A operates using the silicon oxide film 3A and an insulating film 10A formed on the silicon oxide film 3A as a gate insulating film 11A and using the non-doped diamond layer 4A as each of a source region and a drain region.

公开(公告)号：US20190049401A1

公开(公告)日：2019-02-14

申请号：US16080591

申请日：2017-03-02

Applicant: WASEDA UNIVERSITY ,  YOKOGAWA ELECTRIC CORPORATION

Inventor： Hiroshi Kawarada ,  Masafumi Inaba ,  Mohd Sukri Shaili Falina Binti ,  Takuro Naramura ,  Keisuke Igarashi ,  Yukihiro Shintani ,  Kotaro Ogawa

IPC: G01N27/30 ,  G01N27/414 ,  G01N27/416 ,  G01N27/333

Abstract: An electronic component includes a field effect transistor that functions as a working electrode of an ion sensor and a driving circuit that causes a potential difference between a source electrode and a drain electrode of the field effect transistor. A reference electrode potential of the field effect transistor is fixed.