公开(公告)号：WO2022081769A1

公开(公告)日：2022-04-21

申请号：PCT/US2021/054864

申请日：2021-10-13

Applicant: WORCESTER POLYTECHNIC INSTITUTE

Inventor： BHARADWAJ DARALAGODU DATTATREYA JOIS, Sathwik ,  RAMASUBRAMANIAM, Ashwin ,  RAM-MOHAN, Lakshminarayanapuram Ramdas

IPC: H01L35/14 ,  H01L35/34 ,  B82B1/00 ,  B82B3/00 ,  B82Y40/00

Abstract: A method of fabricating a two-dimensional thermoelectric device includes forming dissimilar atomic layers having quantum electron transport properties, and forming a well-defined interface between the dissimilar atomic layers for effecting a thermoelectric transport by exploiting a gradient in the material parameters between the layers. The resulting device defines an inclusion matrix of the dissimilar atomic layers such that the inclusion layer is confined within a matrix formed by the other atomic layer.