Method of wafer dicing and die
    1.
    发明授权

    公开(公告)号:US10685883B1

    公开(公告)日:2020-06-16

    申请号:US16402216

    申请日:2019-05-02

    Abstract: A method of wafer dicing and a die are provided. The method includes the following processes. A wafer is provided, the wafer includes a plurality of die regions and a scribe region between the die regions. The scribe region includes a substrate, and a dielectric layer and a test structure on the substrate, the test structure is disposed in the dielectric layer. A first removal process is performed to remove the test structure and the dielectric layer around the test structure, so as to expose the substrate. The first removal process includes performing a plurality of etching cycles, and each etching cycle includes performing a first etching process to remove a portion of the test structure and performing a second etching process to remove a portion of the dielectric layer. A second removal process is performed to remove the substrate in the scribe region, so as to form a plurality of dies separated from each other.

    Method of wafer dicing
    2.
    发明授权

    公开(公告)号:US10515853B1

    公开(公告)日:2019-12-24

    申请号:US16215584

    申请日:2018-12-10

    Abstract: A method of wafer dicing is provided. The method of wafer dicing includes: providing a wafer, wherein the wafer includes a substrate, dies formed in and over the substrate and a scribe line structure located in a scribe line region between adjacent dies; removing a portion of the scribe line structure around a test device in the scribe line structure; attaching a front side of the wafer with a first tape; removing a portion of the substrate overlapping with the scribe line region from a back side of the wafer; attaching the back side of the wafer with a second tape; and removing the first tape along with the remaining portion of the scribe line structure attached thereon, leaving the dies separately attached on the second tape.

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