公开(公告)号：US10062803B2

公开(公告)日：2018-08-28

申请号：US15083919

申请日：2016-03-29

Applicant: X Development LLC

Inventor： Martin F. Schubert ,  Jason D. Thompson ,  Michael Grundmann

IPC: H01L21/311 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/007 ,  H01L21/7806 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/32

Abstract: Embodiments regard micro-size devices formed by etch of sacrificial epitaxial layers. An embodiment of a method includes forming a plurality of epitaxial layers on a sapphire crystal, wherein the epitaxial layers include a buffer layer on the sapphire crystal, a sacrificial layer above the buffer layer, and one or more device layers above the sacrificial layer; etching to singulate the semiconductor devices, the etching being through the one or more device layers and wholly or partially through the sacrificial layer; electrochemical etching of the sacrificial layer; and lift-off of one or more semiconductor devices from the buffer layer.

公开(公告)号：US20170288087A1

公开(公告)日：2017-10-05

申请号：US15083919

申请日：2016-03-29

Applicant: X Development LLC

Inventor： Martin F. Schubert ,  Jason D. Thompson ,  Michael Grundmann

IPC: H01L33/00 ,  H01L33/32

CPC classification number: H01L33/007 ,  H01L21/7806 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/32

Abstract: Embodiments regard micro-size devices formed by etch of sacrificial epitaxial layers. An embodiment of a method includes forming a plurality of epitaxial layers on a sapphire crystal, wherein the epitaxial layers include a buffer layer on the sapphire crystal, a sacrificial layer above the buffer layer, and one or more device layers above the sacrificial layer; etching to singulate the semiconductor devices, the etching being through the one or more device layers and wholly or partially through the sacrificial layer; electrochemical etching of the sacrificial layer; and lift-off of one or more semiconductor devices from the buffer layer.