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公开(公告)号：CA2083760A1
公开(公告)日：1993-05-27
申请号：CA2083760
申请日：1992-11-25
Applicant: XEROX CORP
Inventor： FORK DAVID K , NASHIMOTO KEIICHI
Abstract: TITLE: Epitaxial Magnesium Oxide as a Buffer Layer for Formation of Subsequent Layers on Tetrahedral Semiconductors A structure includes a semiconducting substrate on which is formed an epitaxial buffer layer of MgO and an epitaxial layer of ferroelectric material or superconducting material or both. The semiconducting substrate is of the tetrahedral structure type, and may be an elemental or compound material. The MgO buffer layer on the tetrahedral semiconducting substrate allows epitaxial formation of the subsequent layers, facilitating the formation of a number of novel monolithic devices.
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2.发明专利
公开(公告)号：JPH05327034A
公开(公告)日：1993-12-10
申请号：JP31039992
申请日：1992-11-19
Applicant: XEROX CORP
Inventor： DEIBITSUDO KEI FUOOKU , NASHIMOTO KEIICHI
Abstract: PURPOSE: To enable an epitaxial growth of a ferroelectric layer, an oxide superconductor layer and other layers on a substrate which is made of different materials, and make easy formation of various kinds of monolithic devices by forming an epitaxially grown MgO layer on a tetrahedron compound semiconductor substrate. CONSTITUTION: A device has a structure such that a tetrahedron compound semiconductor substrate 12 and an epitaxial mechanism oxide layer 14 are provided, which is so grown on the substrate 12 that its crystal axis is oriented toward that of the substrate 12. For example, a thin epitaxial layer 14 which is made of MgO is formed by evaporation on a GaAs (100) substrate 12, and then a thin epitaxial film 16 which is made of BaTiO3 , a ferroelectric substance, is formed on the thin epitaxial layer 14. For deposition of the epitaxial films 14, 16 by evaporation, a laser pulse ablation method is used, which uses an XeCl excimer laser with Mg and BaTiO3 being used is targets.
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