公开(公告)号：BR0204641A

公开(公告)日：2003-09-16

申请号：BR0204641

申请日：2002-11-13

Applicant: XEROX CORP

Inventor： NORTHRUP JOHN E ,  KNEISSL MICJHAEL A

IPC: H01S5/22 ,  H01S5/343 ,  H01S5/40 ,  H01L21/00

Abstract: A dual III-V nitride laser structure has a thick current spreading layer on a sapphire substrate and a trench extending into the current spreading layer to reduce thermal cross-talk between the dual lasers.

公开(公告)号：JP2003124407A

公开(公告)日：2003-04-25

申请号：JP2002288232

申请日：2002-10-01

Applicant: XEROX CORP

Inventor： ROMANO LINDA T ,  KNEISSL MICHAEL A ,  NORTHRUP JOHN E

IPC: H01L23/36 ,  H01L23/367 ,  H01L27/15 ,  H01L29/06 ,  H01L33/64 ,  H01S5/02 ,  H01S5/024

Abstract: PROBLEM TO BE SOLVED: To obtain a substrate having a high thermal conductivity and a structural integrality with a thick board, related to a semiconductor device. SOLUTION: The substrate 100 includes a body 11 having an upper surface 114 and a bottom surface 112 opposite to the upper surface 114 and having the first thermal conductivity, a cavity 116 defined by an inner surface 113 of the body 110 and opened at least on the bottom surface 112, and at least one material 120 disposed in the cavity 116 having the second thermal conductivity higher than the first thermal conductivity and coming into contact with at least a part of the inner surface 113.

公开(公告)号：JP2003158342A

公开(公告)日：2003-05-30

申请号：JP2002330348

申请日：2002-11-14

Applicant: XEROX CORP

Inventor： NORTHRUP JOHN E ,  KNEISSL MICHAEL A

IPC: H01S5/22 ,  H01S5/343 ,  H01S5/40

Abstract: PROBLEM TO BE SOLVED: To provide a dual III-V nitride laser structure in which thermal crosstalk is reduced. SOLUTION: This dual semiconductor laser structure is provided with a substrate 102, III-V nitride semiconductor current diffusion layers 202, 302 formed on the substrate, and a plurality of III-V nitride semiconductor layers formed on the current diffusion layers. At least one out of the plurality of III-V nitride semiconductor layers is provided with III-V nitride semiconductor layers 206, 306 forming active layers, and a trench 116 which penetrates the plurality of III-V nitride semiconductor layers, is stretched penetrating a part of the current diffusion layers and forms a first laser 200 and a second laser 300 from the plurality of III-V nitride semiconductor layers. Thermal crosstalk between the first and the second lasers is reduced by depth of the trench and thickness of the current diffusion layers.

公开(公告)号：JP2009021631A

公开(公告)日：2009-01-29

申请号：JP2008255070

申请日：2008-09-30

Applicant: Xerox Corp ,  ゼロックス コーポレイションXerox Corporation

Inventor： NORTHRUP JOHN E ,  VAN DE WALLE CHRISTIAN G

IPC: H01L21/205 ,  H01L33/32

Abstract: PROBLEM TO BE SOLVED: To provide a doped semiconductor material that compensates local stress derived from a dopant atom having a covalent radius smaller or larger than covalent radii of substrate atoms of a group III-V semiconductor material. SOLUTION: In a semiconductor material 140 including a group III-V region doped with p-type dopants (Be: In), the p-type dopants include a first p-type dopant (Be), (at least one) second p-type dopant (In) (and an impurity). The first p-type dopant has a covalent radius different than the covalent radii of each second p-type dopant (and the impurity), and the first p-type dopant atom (Be) locates at a second nearest neighbor position with respect to the second p-type dopant atom (In) (the first nearest neighbor atom is an N atom in Fig. 8 (not shown)). COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种掺杂半导体材料，其补偿来自具有小于或大于III-V族III族半导体材料的基底原子的共价半径的共价半径的掺杂剂原子的局部应力。 解决方案：在包括掺杂有p型掺杂剂（Be：In）的III-V族区域的半导体材料140中，p型掺杂剂包括第一p型掺杂剂（Be），（至少一种） 第二种p型掺杂剂（In）（和杂质）。 第一p型掺杂剂具有与每个第二p型掺杂剂（和杂质）的共价半径不同的共价半径，并且第一p型掺杂剂原子（Be）相对于第二p型掺杂剂位于第二最近邻位置 第二p型掺杂剂原子（In）（图8中未示出的第一最近邻原子是N原子）。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2002359397A

公开(公告)日：2002-12-13

申请号：JP2002128026

申请日：2002-04-30

Applicant: XEROX CORP

Inventor： NORTHRUP JOHN E ,  VAN DE WALLE CHRISTIAN G

IPC: H01L33/32 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To raise the doping level of a semiconductor material. SOLUTION: The semiconductor material contains at least one group III-V region doped with a p-type dopant. The p-type dopant contains a first p-type dopant and at least one second p-type dopant and an impurity. The first p-type dopant is a semiconductor material having an atomic radius which is different from those of the second p-type dopants and impurity, so that local stresses in at least one group III-V region caused by the first p-type dopant may be compensated by local stresses in at least one group III-V region caused by at least one second p-type dopant and impurity and, in addition, the density of the first p-type dopant in at least one group III-V region may be increased.