公开(公告)号：DE60225110T2

公开(公告)日：2009-03-05

申请号：DE60225110

申请日：2002-11-15

Applicant: XEROX CORP

Inventor： NORTHUP JOHN E ,  KNEISSL MICHAEL A

IPC: H01S5/22 ,  H01S5/343 ,  H01S5/40

Abstract: A dual III-V nitride laser structure has a thick current spreading layer on a sapphire substrate and a trench extending into the current spreading layer to reduce thermal cross-talk between the dual lasers.

公开(公告)号：DE60225110D1

公开(公告)日：2008-04-03

申请号：DE60225110

申请日：2002-11-15

Applicant: XEROX CORP

Inventor： NORTHUP JOHN E ,  KNEISSL MICHAEL A

IPC: H01S5/22 ,  H01S5/343 ,  H01S5/40

Abstract: A dual III-V nitride laser structure has a thick current spreading layer on a sapphire substrate and a trench extending into the current spreading layer to reduce thermal cross-talk between the dual lasers.