公开(公告)号：DE69217360T2

公开(公告)日：1997-07-17

申请号：DE69217360

申请日：1992-07-17

Applicant: XEROX CORP

Inventor： APPEL JAMES J ,  ROSSMAN KENNETH R ,  PAOLI THOMAS L

IPC: H01S5/00 ,  H01S5/024 ,  H01S5/026 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/068 ,  H01S5/20 ,  H01S5/34 ,  H01S5/40 ,  H01S3/133 ,  H01S3/25

Abstract: A diode laser structure (10) is thermally stabilized by passing current through heater strips (28) along the sides of the diode laser cavity (26). The diode laser structure comprises a first confinement layer (14) and a substrate (12) of one conductivity type, an active layer (16), a second confinement layer (18) and a contact layer (20) of an opposing conductivity type. Disordered regions (24) extend from the contact layer through to the first confinement layer defining diode laser cavities. Resistive regions (28, 32) are formed within the disordered regions. Individual contacts on the contact layer aligned with each diode laser cavity inject current through the diode laser cavity to the contact on the substrate, causing emission of coherent radiation through an edge face of the diode laser structure. Individual contacts on the contact layer aligned with resistive regions inject current through the resistive region to the contact on the substrate, causing generation of heat. The resistive region within the disordered region forms a heater strip, and adjacent heater strips maintain the temperature within the diode laser cavity between the adjacent disordered regions of the heater strips. The resistive region (28) can be replaced with a diffused region (50) to provide a forward biased p-n junction to form the heater strip. The contacts (84, 86) for the laser cavity and the heater strips can be interdigitated.

公开(公告)号：DE69217360D1

公开(公告)日：1997-03-20

申请号：DE69217360

申请日：1992-07-17

Applicant: XEROX CORP

Inventor： APPEL JAMES J ,  ROSSMAN KENNETH R ,  PAOLI THOMAS L

IPC: H01S5/00 ,  H01S5/024 ,  H01S5/026 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/068 ,  H01S5/20 ,  H01S5/34 ,  H01S5/40 ,  H01S3/133 ,  H01S3/25

Abstract: A diode laser structure (10) is thermally stabilized by passing current through heater strips (28) along the sides of the diode laser cavity (26). The diode laser structure comprises a first confinement layer (14) and a substrate (12) of one conductivity type, an active layer (16), a second confinement layer (18) and a contact layer (20) of an opposing conductivity type. Disordered regions (24) extend from the contact layer through to the first confinement layer defining diode laser cavities. Resistive regions (28, 32) are formed within the disordered regions. Individual contacts on the contact layer aligned with each diode laser cavity inject current through the diode laser cavity to the contact on the substrate, causing emission of coherent radiation through an edge face of the diode laser structure. Individual contacts on the contact layer aligned with resistive regions inject current through the resistive region to the contact on the substrate, causing generation of heat. The resistive region within the disordered region forms a heater strip, and adjacent heater strips maintain the temperature within the diode laser cavity between the adjacent disordered regions of the heater strips. The resistive region (28) can be replaced with a diffused region (50) to provide a forward biased p-n junction to form the heater strip. The contacts (84, 86) for the laser cavity and the heater strips can be interdigitated.