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公开(公告)号：US20240304755A1
公开(公告)日：2024-09-12
申请号：US18667401
申请日：2024-05-17
Applicant: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
Inventor： Shiwei LIU , Jin XU , Chung-ying CHANG , Baojun SHI , Shuijie WANG , Ke LIU
Abstract: A light-emitting diode includes a substrate and a semiconductor layered structure that is located on the substrate. The semiconductor layered structure includes at least one light-emitting unit, a semiconductor island-structure, and a trench. The trench is located between the at least one light-emitting unit and the semiconductor island-structure. A light-emitting device includes the light-emitting diode.
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公开(公告)号：US20240088327A1
公开(公告)日：2024-03-14
申请号：US18509965
申请日：2023-11-15
Applicant: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
Inventor： Shiwei LIU , Jin XU , Baojun SHI , Shuijie WANG , Ke LIU , Chung-ying CHANG
IPC: H01L33/10
CPC classification number: H01L33/10
Abstract: A light emitting device includes a light-emitting laminate and an insulating reflective structure. The insulating reflective structure includes n pairs of dielectric layers stacked on the light-emitting laminate. Each of the n pairs of dielectric layers includes a first material layer and a second material layer. The first material layer has a first refractive index, and the second material layer has a second refractive index that is greater than the first refractive index of the first material layer. For each pair of dielectric layers among m1 pairs of dielectric layers out of the n pairs of dielectric layers, the first material layer has an optical thickness that is greater than that of the second material layer, where 0.5n≤m1≤n, and n and m1 are natural numbers greater than 0.
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公开(公告)号：US20230290907A1
公开(公告)日：2023-09-14
申请号：US18320057
申请日：2023-05-18
Applicant: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
Inventor： Qing WANG , Wei LI , Minyou HE , Shiwei LIU , Ling-yuan HONG , Su-hui LIN , Chung-ying CHANG
IPC: H01L33/46 , G02F1/13357
CPC classification number: H01L33/46 , G02F1/1336 , G02F2201/346
Abstract: A light-emitting device includes a light-emitting element including an epitaxial structure and a DBR. The DBR includes first and second reflective units. The first reflective unit includes first reflective structures. The second reflective unit includes second reflective structures. Each of the first and second reflective structures has first and second material layers. The first material layer of each of the first reflective structures has an optical thickness different from that of the first material layer of each of the second reflective structures. The second material layer of each of the first reflective structures has an optical thickness different from that of the second material layer of each of the second reflective structures. In each of the first and second reflective structures, the first material layer has a refractive index different from that of the second material layer.
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公开(公告)号：US20220158028A1
公开(公告)日：2022-05-19
申请号：US17454895
申请日：2021-11-15
Applicant: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
Inventor： Shiwei LIU , Jin XU , Shuijie WANG , Zhenni QUE , Ke LIU , Chung-Ying CHANG , Ho-Chia TSENG
Abstract: A light-emitting device includes a substrate, a first and second mesa structures disposed on the substrate, at least one current blocking element, at least one conductive bridging element, and first and second conductive pads. The conductive bridging element is disposed on the current blocking element, and is electrically connected to the first and second mesa structures. The first and second conductive pads are electrically connected to the first and second mesa structures, respectively. The conductive bridging element has a projection image that is spaced apart from those of the first and second conductive pads in a plan view of the light-emitting device. A light-emitting module including the light-emitting device, and a display apparatus including the light-emitting device are also disclosed.
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