公开(公告)号：US20230175908A1

公开(公告)日：2023-06-08

申请号：US18160632

申请日：2023-01-27

Applicant: YOKOGAWA ELECTRIC CORPORATION

Inventor： Shigeto Iwai ,  Atsushi Yumoto ,  Makoto Noro ,  Takashi Yoshida

IPC: G01L9/00

CPC classification number: G01L9/0072

Abstract: A resonant pressure sensor with improved linearity includes: a substrate including a substrate-separated portion separated from a housing-fixed portion; a first resonator that: is disposed in the substrate-separated portion; and detects a change of a first resonance frequency based on a strain in the substrate caused by static pressure applied by a pressure-receiving fluid; a second resonator that: is disposed in the substrate; detects a change of a second resonance frequency based on the strain in the substrate; and has a pressure sensitivity of the second resonance frequency; and a processor that: measures the static pressure based on the detected change of the first resonance frequency; and corrects the static pressure according to internal temperature of the pressure sensor based on a difference between the second resonance frequency and the first resonance frequency.

公开(公告)号：US11815420B2

公开(公告)日：2023-11-14

申请号：US18160632

申请日：2023-01-27

Applicant: YOKOGAWA ELECTRIC CORPORATION

Inventor： Shigeto Iwai ,  Atsushi Yumoto ,  Makoto Noro ,  Takashi Yoshida

IPC: G01L9/00

CPC classification number: G01L9/0072

Abstract: A resonant pressure sensor with improved linearity includes: a substrate including a substrate-separated portion separated from a housing-fixed portion; a first resonator that: is disposed in the substrate-separated portion; and detects a change of a first resonance frequency based on a strain in the substrate caused by static pressure applied by a pressure-receiving fluid; a second resonator that: is disposed in the substrate; detects a change of a second resonance frequency based on the strain in the substrate; and has a pressure sensitivity of the second resonance frequency; and a processor that: measures the static pressure based on the detected change of the first resonance frequency; and corrects the static pressure according to internal temperature of the pressure sensor based on a difference between the second resonance frequency and the first resonance frequency.

公开(公告)号：US20210215560A1

公开(公告)日：2021-07-15

申请号：US17143517

申请日：2021-01-07

Applicant: YOKOGAWA ELECTRIC CORPORATION

Inventor： Shigeto Iwai ,  Atsushi Yumoto ,  Makoto Noro ,  Takashi Yoshida

IPC: G01L9/00

Abstract: An resonant pressure sensor, includes: a housing; a housing-fixed portion that is fixed to the housing; a substrate that includes a substrate-fixed portion that is fixed to the housing-fixed portion and a substrate-separated portion that is separated from the housing-fixed portion and extends from the substrate-fixed portion; a first resonator that is disposed in the substrate-separated portion and that detects a change of a resonance frequency based on a strain in the substrate caused by static pressure applied by the pressure-receiving fluid; and a processor. A pressure-receiving fluid is interposed in a gap between the housing-fixed portion and the substrate and envelops the substrate. The processor measures the static pressure based on the detected change of the resonance frequency.

公开(公告)号：US11428594B2

公开(公告)日：2022-08-30

申请号：US17143517

申请日：2021-01-07

Applicant: YOKOGAWA ELECTRIC CORPORATION

Inventor： Shigeto Iwai ,  Atsushi Yumoto ,  Makoto Noro ,  Takashi Yoshida

IPC: G01L9/00

Abstract: A resonant pressure sensor has high linearity and includes: a housing; and a pressure sensing unit that detects a static pressure based on a change value of a resonance frequency and includes: a housing-fixed portion; a substrate that includes a substrate-fixed portion and a substrate-separated portion; the pressure-receiving fluid that is interposed in a gap between the housing-fixed portion and the substrate and envelops the substrate; and a first resonator that is disposed in the substrate-separated portion and detects the change value of the resonance frequency based on a strain in the substrate caused by the static pressure applied by the pressure-receiving fluid, wherein the first resonator is made of a semiconductor material including an impurity, a concentration of the impurity is 1×1020 (cm−3) or higher, and an atomic radius of the impurity is smaller than an atomic radius of the semiconductor material.

公开(公告)号：US11211916B2

公开(公告)日：2021-12-28

申请号：US15814481

申请日：2017-11-16

Applicant: Yokogawa Electric Corporation

Inventor： Takashi Yoshida ,  Yusaku Yoshida ,  Makoto Noro ,  Atsushi Yumoto ,  Shuhei Yoshita

IPC: H03H9/24 ,  H03H9/02

Abstract: A resonant transducer includes a resonant beam which is formed on a semiconductor substrate, a support beam of which one end is connected to a part of the resonant beam at a predetermined angle, a first electrode which is connected to the resonant beam via the support beam, a second electrode which is disposed adjacent to a center of one side surface of the resonant beam, and a conductor which is disposed between the support beam and the second electrode, the conductor being connected to the first electrode.

公开(公告)号：US11592347B2

公开(公告)日：2023-02-28

申请号：US17854209

申请日：2022-06-30

Applicant: YOKOGAWA ELECTRIC CORPORATION

Inventor： Shigeto Iwai ,  Atsushi Yumoto ,  Makoto Noro ,  Takashi Yoshida

IPC: G01L9/00

Abstract: A resonant pressure sensor with improved linearity includes a substrate including a substrate-fixed portion fixed to a housing-fixed portion and a substrate-separated portion separated from the housing-fixed portion in a first direction; a first resonator disposed in the substrate-separated portion to detect a change of a resonance frequency based on a strain caused by static pressure applied by a pressure-receiving fluid interposed in a gap between the housing-fixed portion and the substrate; a first electrode extending along a second direction to output an excitation signal to the first resonator; a second electrode that extends along the second direction and from which the first resonator outputs a signal having the resonance frequency; and a processor that measures the static pressure based on the detected change.

公开(公告)号：US20220349766A1

公开(公告)日：2022-11-03

申请号：US17854209

申请日：2022-06-30

Applicant: YOKOGAWA ELECTRIC CORPORATION

Inventor： Shigeto Iwai ,  Atsushi Yumoto ,  Makoto Noro ,  Takashi Yoshida

IPC: G01L9/00

Abstract: A resonant pressure sensor includes: a housing; a housing-fixed portion that is fixed to the housing; a substrate that comprises: a substrate-fixed portion that is fixed to the housing-fixed portion; and a substrate-separated portion that is separated from the housing-fixed portion in a first direction and extends from the substrate-fixed portion; a first resonator that is disposed in the substrate-separated portion and that detects a change of a resonance frequency based on a strain in the substrate caused by static pressure applied by a pressure-receiving fluid; a first electrode that extends along a second direction perpendicular to the first direction and that outputs an excitation signal to the first resonator to excite the first resonator; and a second electrode that extends along the second direction and from which the first resonator outputs a signal having the resonance frequency.

公开(公告)号：US10955434B2

公开(公告)日：2021-03-23

申请号：US16693485

申请日：2019-11-25

Applicant: Yokogawa Electric Corporation

Inventor： Shigeto Iwai ,  Makoto Noro

IPC: G01P15/097 ,  G01P15/08

Abstract: A resonant sensor device includes a base and a detection substrate. The detection substrate includes a movable portion configured to move in a first direction, a supporter includes one or more supporting portions which extend in a direction along an intersecting plane intersecting the first direction, an intermediate fixing portion which is connected to the movable portion via the supporter, a connection portion which connects a mounting portion fixed to the base to the intermediate fixing portion in a second direction that is one direction along the intersecting plane, and a resonator at least partially embedded in the one or more supporting portions. The maximum dimension of the connection portion in a third direction orthogonal to the second direction in the intersecting plane is smaller than a maximum dimension of the supporter in the third direction.