公开(公告)号：US20130109601A1

公开(公告)日：2013-05-02

申请号：US13671471

申请日：2012-11-07

Applicant: Yeda research and development company ltd.

Inventor： Reshef TENNE ,  Francis Leonard DEEPAK ,  Hagai COHEN ,  Sidney R. COHEN ,  Rita ROSENTSVEIG ,  Lena YADGAROV

IPC: H01B1/10

CPC classification number: H01B1/10 ,  B82Y30/00 ,  C01G1/00 ,  C01G39/06 ,  C01G41/00 ,  C01P2002/52 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/85 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/13 ,  C01P2004/34 ,  C01P2006/40

Abstract: A nanostructure, being either an Inorganic Fullerene-like (IF) nanostructure or an Inorganic Nanotube (INT), having the formula A1−x-Bx-chalcogenide are described. A being a metal or transition metal or an alloy of metals and/or transition metals, B being a metal or transition metal B different from that of A and x being ≦0.3. A process for their manufacture and their use for modifying the electronic character of A-chalcogenide are described.

Abstract translation: 描述了具有式A1-x-Bx-硫族化物的纳米结构，其为无机富勒烯样（IF）纳米结构或无机纳米管（INT））。 A是金属或过渡金属或金属和/或过渡金属的合金，B是与A不同的金属或过渡金属B，x为0.3。 描述了其制造方法及其用于改变A-硫族化物的电子特性的用途。