公开(公告)号：US20170125613A1

公开(公告)日：2017-05-04

申请号：US15317641

申请日：2015-05-22

Applicant: ams AG

Inventor： Rainer MINIXHOFER ,  Bernhard STERING ,  Harald ETSCHMAIER

IPC: H01L31/0216 ,  H01L31/18 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/153 ,  H01L31/0203

CPC classification number: H01L31/02164 ,  H01L27/14678 ,  H01L31/02005 ,  H01L31/02019 ,  H01L31/0203 ,  H01L31/02325 ,  H01L31/153 ,  H01L31/167 ,  H01L31/1876 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/16145 ,  H01L2224/16237 ,  H01L2224/48145 ,  H01L2224/48228 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2224/32145 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

Abstract: The semiconductor device comprises a semiconductor substrate (1), a photosensor (2) integrated in the substrate (1) at a main surface (10), an emitter (12) of radiation mounted above the main surface (10), and a cover (6), which is at least partially transmissive for the radiation, arranged above the main surface (10). The cover (6) comprises a cavity (7), and the emitter (12) is arranged in the cavity (7). A radiation barrier (9) can be provided on a lateral surface of the cavity (7) to inhibit cross-talk between the emitter (12) and the photosensor (2).

公开(公告)号：US20170092787A1

公开(公告)日：2017-03-30

申请号：US15312602

申请日：2015-04-23

Applicant: AMS AG

Inventor： Guenther KOPPITSCH ,  Rainer MINIXHOFER

IPC: H01L31/0236 ,  H01L31/09 ,  H01L31/101 ,  H01L31/0232

CPC classification number: H01L31/02366 ,  H01L31/02325 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/09 ,  H01L31/101 ,  Y02E10/50

Abstract: The semiconductor device comprises a semiconductor substrate (2), a transition layer (5) in or on the semiconductor substrate, the transition layer allowing propagation of incident radiation (7) according to a refractive index, and a photonic component (4) facing the transition layer. A surface (6) of the transition layer is structured such that the effective refractive index is gradually changed through the transition layer with changing distance from the photonic component.

公开(公告)号：US20160035929A1

公开(公告)日：2016-02-04

申请号：US14777484

申请日：2014-03-11

Applicant: AMS AG

Inventor： Jordi TEVA ,  Frederic ROGER ,  Ewald STUECKLER ,  Stefan JESSENIG ,  Rainer MINIXHOFER ,  Ewald WACHMANN ,  Martin SCHREMS ,  Guenther KOPPITSCH

IPC: H01L31/107 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/0224 ,  H01L31/0352

CPC classification number: H01L31/107 ,  H01L31/022408 ,  H01L31/03529 ,  H01L31/03682 ,  H01L31/182 ,  Y02E10/50

Abstract: The lateral single-photon avalanche diode comprises a semiconductor body comprising a semiconductor material of a first type of electric conductivity, a trench in the semiconductor body, and anode and cathode terminals. A junction region of the first type of electric conductivity is located near the sidewall of the trench, and the electric conductivity is higher in the junction region than at a farther distance from the sidewall. A semiconductor layer of an opposite second type of electric conductivity is arranged at the sidewall of the trench adjacent to the junction region. The anode and cathode terminals are electrically connected with the semiconductor layer and with the junction region, respectively. The junction region may be formed by a sidewall implantation.

Abstract translation: 横向单光子雪崩二极管包括半导体本体，其包括第一导电类型的半导体材料，半导体主体中的沟槽以及阳极和阴极端子。 第一类电导率的结区域位于沟槽的侧壁附近，并且在结区域中的电导率高于距离侧壁更远的距离。 相邻的第二导电类型的半导体层被布置在与结区相邻的沟槽的侧壁处。 阳极和阴极端子分别与半导体层和结区域电连接。 接合区域可以通过侧壁注入形成。

公开(公告)号：US20160013355A1

公开(公告)日：2016-01-14

申请号：US14769090

申请日：2014-02-04

Applicant: AMS AG

Inventor： Rainer MINIXHOFER

IPC: H01L31/18 ,  H01L31/0216 ,  H01L27/144

CPC classification number: H01L31/18 ,  G02B5/201 ,  H01L27/1446 ,  H01L27/14621 ,  H01L27/14685 ,  H01L31/02162

Abstract: The method comprises the steps of providing a semiconductor device comprising a semiconductor layer (1) with at least one radiation sensor (6) and a dielectric layer (2), arranging a web (3) comprising a plurality of recesses (4) on the dielectric layer, and introducing ink of different colors (A, B, C) in the recesses by inkjets (I).

Abstract translation: 该方法包括以下步骤：提供包括具有至少一个辐射传感器（6）和介电层（2）的半导体层（1）的半导体器件，将包括多个凹部（4）的网（3） 电介质层，并通过喷墨头（I）在凹槽中引入不同颜色（A，B，C）的墨水。

公开(公告)号：US20170062504A1

公开(公告)日：2017-03-02

申请号：US15119377

申请日：2015-02-10

Applicant: ams AG

Inventor： Rainer MINIXHOFER ,  Martin SCHREMS ,  Sara CARNIELLO

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14618 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/3269 ,  H01L31/02016 ,  H01L31/0203 ,  H01L2924/1815

Abstract: The semiconductor device comprises a semiconductor substrate (1), a sensor or sensor array (2) arranged at a main surface (10) of the substrate, an integrated circuit (3) arranged at or above the main surface, and a focusing element (17) comprising recesses (4) formed within a further main surface (11) of the substrate opposite the main surface. The focusing element may be arranged opposite the sensor or sensor array (2), which may be a photosensor or photodetector or an array of photosensors or photodetectors, for instance. The focusing element (17) is formed by etching the recesses (4) into the semiconductor material.

Abstract translation: 半导体器件包括半导体衬底（1），布置在衬底的主表面（10）处的传感器或传感器阵列（2），布置在主表面上或上方的集成电路（3）和聚焦元件 17）包括形成在与主表面相对的基板的另一主表面（11）内的凹部（4）。 聚焦元件可以布置成与传感器或传感器阵列（2）相对，例如可以是光电传感器或光电检测器或光电传感器或光电探测器阵列。 通过将凹部（4）蚀刻成半导体材料形成聚焦元件（17）。

公开(公告)号：US20160104741A1

公开(公告)日：2016-04-14

申请号：US14889835

申请日：2014-04-15

Applicant: ams AG

Inventor： Hubert ENICHLMAIR ,  Rainer MINIXHOFER ,  Martin SCHREMS

IPC: H01L27/146 ,  H01L31/0368

CPC classification number: H01L27/14649 ,  G01J5/022 ,  G01J5/0225 ,  G01J5/024 ,  G01J5/045 ,  G01J5/048 ,  G01J5/0806 ,  G01J2005/0077 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14685 ,  H01L31/02325 ,  H01L31/03682 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The integrated imaging device comprises a substrate (1) with an integrated circuit (4), a cover (2), a cavity (6) enclosed between the substrate (1) and the cover (2), and a sensor (5) or an array of sensors (5) arranged in the cavity (6). A surface (11, 12) of the substrate (1) or the cover (2) opposite the cavity (6) has a structure (8) directing incident radiation. The surface structure (8) may be a plate zone or a Fresnel lens focusing infrared radiation and may be etched into the surface of the substrate or cover, respectively.

Abstract translation: 集成成像装置包括具有集成电路（4），盖（2），封闭在基板（1）和盖（2）之间的空腔（6）的基板（1）和传感器（5）或 布置在空腔（6）中的传感器阵列（5）。 衬底（1）或与腔（6）相对的盖（2）的表面（11,12）具有引导入射辐射的结构（8）。 表面结构（8）可以是聚焦红外辐射的平板区域或菲涅耳透镜，并且可以分别蚀刻到基底或盖的表面中。