公开(公告)号：KR20100108262A

公开(公告)日：2010-10-06

申请号：KR20100026816

申请日：2010-03-25

Applicant: ABB TECHNOLOGY AG

Inventor： HOLAUS WALTER ,  SMAJIC JASMIN ,  KOSTOVIC JADRAN

IPC: H01H33/14 ,  H01H33/04

CPC classification number: H02G5/063 ,  H02G5/002

Abstract: PURPOSE: A high voltage device is provided to reduce various VFTs(Very Fast Transient) by diversifying the arrangement and the size of transient reduction units. CONSTITUTION: A high voltage device comprises a conductive element(121) and a transient reduction unit(130). The conductive element conducts the current of the high voltage. The transient reduction unit reduces the voltage peak of a VTF by generating an arcing. The transient reduction unit includes at least one arc formation generation surface and at least one permanent electricity contact part. The permanent electricity contact part is connected to the conductive element. When a transient electric potential difference between the conductive element and the transient reduction unit is greater than a critical value, the arching is generated between the transient reduction unit and the conductive element.

Abstract translation: 目的：提供高压装置，通过多样化瞬态还原装置的布置和尺寸来减少各种VFT（非常快速瞬态）。 构成：高电压装置包括导电元件（121）和瞬态还原单元（130）。 导电元件导通高电压电流。 瞬态降低单元通过产生电弧来降低VTF的电压峰值。 瞬时减小单元包括至少一个弧形生成表面和至少一个永久电接触部分。 永久电接触部分连接到导电元件。 当导电元件和瞬变减小单元之间的瞬时电位差大于临界值时，在瞬变减小单元和导电元件之间产生拱形。

公开(公告)号：KR20100092063A

公开(公告)日：2010-08-19

申请号：KR20107016307

申请日：2008-01-21

Applicant: ABB TECHNOLOGY AG

Inventor： ASPLUND GUNNAR

IPC: H02M7/79 ,  H02K17/04

CPC classification number: H02M1/088 ,  H02M7/757 ,  H02M7/797 ,  H02M2001/0054 ,  H03K17/107 ,  H03K17/163 ,  H03K17/168 ,  H03K2217/0036 ,  Y02B70/1491 ,  Y10T307/383 ,  Y10T307/445 ,  Y10T307/453 ,  Y10T307/675

Abstract: VSC 컨버터는, 제 1의 고 레벨의 전압 차단 용량 등급을 갖는 1 개의 턴-오프 타입의 제 1 반도체 디바이스 (24), 및 그 제 1 반도체 디바이스와 병렬로 접속된, 제 2의 더 낮은 레벨의 전압 차단 용량 등급을 갖는 턴-오프 타입의 복수의 제 2 반도체 디바이스들 (25 내지 29) 을 각각의 밸브 내에 포함한다. 컨버터의 제어 장치 (23) 는, 제 2 반도체 디바이스들이 턴온되고, 지연을 가지고 제 1 반도체 디바이스들이 턴온되도록 제어함으로써 밸브의 순방향 바이어스된 차단 상태로부터 시작하여 통전 상태로 상기 밸브를 스위칭하고, 통전 상태의 끝에서, 제 2 반도체 디바이스들을 턴오프시키는 것에 선행하여 제 1 반도체 디바이스를 턴오프시키도록 구성된다.

Abstract translation: VSC转换器包括在每个阀中的一个第一半导体器件，其具有第一高电平的电压阻断容量额定值并且与其并联连接的多个第二半导体器件的关断型和 电压阻抗等级达到第二级，较低级别。 转换器的控制装置被配置为通过控制第二半导体器件导通而将所述阀切换到从阀的正向偏压阻塞状态开始的导通状态，然后第一半导体器件延迟导通 并且在导通状态结束时，在关闭第二半导体器件之前关闭第一半导体器件。

公开(公告)号：JP6324185B2

公开(公告)日：2018-05-16

申请号：JP2014087104

申请日：2014-04-21

Applicant: アーベーベー テクノロジー アクチエンゲゼルシャフト ,  ABB Technology AG

Inventor： トビアス ヴィクストレーム

IPC: H02M1/08

CPC classification number: H03K17/732 ,  H03K17/0412

公开(公告)号：JP5840473B2

公开(公告)日：2016-01-06

申请号：JP2011264805

申请日：2011-12-02

Applicant: アーベーベー テクノロジー アクチエンゲゼルシャフト ,  ABB Technology AG

Inventor： クリスティアン ロイバー ,  ディートマー ゲンチュ

IPC: H01H33/662

CPC classification number: H01H33/66207 ,  H01H33/66261 ,  H01H2033/66223 ,  H01H2033/6623 ,  H01H2033/66284

公开(公告)号：JP2013243356A

公开(公告)日：2013-12-05

申请号：JP2013096331

申请日：2013-05-01

Applicant: Abb Technology Ag ,  アーベーベー・テヒノロギー・アーゲー

Inventor： HARTMANN SAMUEL ,  DOMINIK TRUESSEL

IPC: H01L25/07 ,  H01L21/822 ,  H01L25/18 ,  H01L27/04

CPC classification number: H01L27/067 ,  H01L25/072 ,  H01L25/18 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a power semiconductor module which enables application to use in a large amount of power associated with a high current; which exhibits improved temperature characteristics; and which can be easily and economically mounted.SOLUTION: A power semiconductor module 1 including a base plate 2 and at least a pair of substrates 3 mounted on the base plate comprises a plurality of power semiconductors 4, 5 which are mounted on each substrate. The power semiconductors are arranged on each substrate in different numbers along opposite edges 6 of each substrate. At least one pair of substrates are arranged on the base plate so that the edges of the substrates including the power semiconductors in less numbers than on the opposite edges face one another.

Abstract translation: 要解决的问题：提供能够应用于与大电流相关的大量电力的功率半导体模块; 其表现出改善的温度特性; 并且其可以容易且经济地安装。解决方案：包括基板2和安装在基板上的至少一对基板3的功率半导体模块1包括安装在每个基板上的多个功率半导体4,5。 功率半导体沿着每个衬底的相对边缘6以不同的数量布置在每个衬底上。 至少一对基板布置在基板上，使得包括数量少于相对边缘的功率半导体的基板的边缘彼此面对。

公开(公告)号：JP2013110960A

公开(公告)日：2013-06-06

申请号：JP2012256215

申请日：2012-11-22

Applicant: Abb Technology Ag ,  アーベーベー・テヒノロギー・アーゲー

Inventor： KORN ARTHUR

IPC: H02M7/48 ,  H02M7/5387 ,  H02M7/797

CPC classification number: H02H7/10 ,  H02H7/12 ,  H02M1/32 ,  H02M7/49 ,  H02M2001/325 ,  H02M2007/4835

Abstract: PROBLEM TO BE SOLVED: To provide means to identify failure in a converter concerning a modular multilevel power converter.SOLUTION: A converter 1 comprises plural bridge branches 2. The plural bridge branches 2 have one or more switching cells 3 connected in series, each bridge branch 2 connects one of plural inputs of the converter 1 to one of plural outputs. This method comprises: a step of monitoring each of the switching cells 3 for determining failure; and a step of triggering one of triggering elements performing short circuit of the switching cell connection in the case of identifying failure in one of the switching cells 3, and no failure in another one of the switching cells 3 is identified after the identified failure in the one switching cell 3, especially, during a predetermined period.

Abstract translation: 要解决的问题：提供识别有关模块化多电平功率转换器的转换器故障的方法。 A转换器1包括多个桥接分支2.多个桥接分支2具有串联连接的一个或多个开关单元3，每个桥接支路2将转换器1的多个输入中的一个连接到多个输出中的一个。 该方法包括：监视每个开关单元3以确定故障的步骤; 以及在识别出其中一个交换单元3中的故障的情况下触发开关单元连接短路的触发元件之一的步骤，并且在所述开关单元3中的所述故障之后，不识别出所述开关单元3中的另一个之后的故障。 一个开关电池3，特别是在预定的时间段内。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012221960A

公开(公告)日：2012-11-12

申请号：JP2012089923

申请日：2012-04-11

Applicant: Abb Technology Ag ,  アーベーベー・テヒノロギー・アーゲー

Inventor： LARS LILJESTRAND ,  LARS E JONSSON ,  PER SKARBY ,  PER LINDHOLM ,  UELI STEIGER

IPC: H01H33/64 ,  H01H33/06

CPC classification number: H01H33/22 ,  H01H1/50 ,  H01H33/14 ,  H01H33/64 ,  H01H33/68 ,  H01H2033/028 ,  H01H2033/566

Abstract: PROBLEM TO BE SOLVED: To provide a high voltage switch which has high voltage withstand capability and achieves fast interruption times.SOLUTION: A switching arrangement 12 has a first set of contact elements 13a, 13b, 13c and a second set of contact elements 14a, 14b, 14c. Each of contact elements 13a, 13b, 13c and 14a, 14b, 14c includes conducting elements 16 and an insulating carrier 15 carrying the conducting elements 16. In the closed state of the switching arrangement 12, the conducting elements 16 align to form one or more current paths between terminals 8 and 9 in an axial direction A of the terminals 8 and 9. For opening the switching arrangement 12, the contact elements are mutually displaced by means of one or two drives in a direction D perpendicular to the axial direction A. The switching arrangement 12 consisting of these elements is arranged in a fluid-tight housing in a gas of elevated pressure or in a liquid.

Abstract translation: 要解决的问题：提供具有高耐压能力并实现快速中断时间的高压开关。 解决方案：切换装置12具有第一组接触元件13a，13b，13c和第二组接触元件14a，14b，14c。 接触元件13a，13b，13c和14a，14b，14c中的每一个包括导电元件16和承载导电元件16的绝缘载体15.在开关装置12的闭合状态下，导电元件16对准以形成一个或多个 在端子8和9的轴向A之间的端子8和9之间的电流路径。为了打开切换装置12，接触元件通过一个或两个驱动器在垂直于轴向方向A的方向D上相互位移。 由这些元件组成的切换装置12被布置在处于高压气体或液体中的流体密封的壳体中。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012070619A

公开(公告)日：2012-04-05

申请号：JP2011195804

申请日：2011-09-08

Applicant: Abb Technology Ag ,  アーベーベー・テヒノロギー・アーゲー

Inventor： CHRISTIAN STULZ ,  HALINA BURZYANOBSKA

IPC: H02P21/00 ,  H02P27/04

CPC classification number: H02P23/14 ,  H02P21/141

Abstract: PROBLEM TO BE SOLVED: To provide a method for more accurately correcting an error in the open loop control of a rotary electric machine.SOLUTION: In controlling a rotary electric machine 20, a flux drift caused by measurement and/or a calculation error is corrected. The flux drift of an estimated flux vector may be corrected by comparing a size of reference flux and a length of the flux vector, which are determined for inverter control, with each other. According to the comparison result, the length of the estimated flux vector is adjusted to be longer or shorter.

Abstract translation: 要解决的问题：提供一种更准确地校正旋转电机的开环控制中的误差的方法。 解决方案：在控制旋转电机20时，校正由测量和/或计算误差引起的磁通漂移。 估计磁通矢量的磁通漂移可以通过比较参考磁通的大小和为逆变器控制而确定的磁通矢量的长度彼此进行校正。 根据比较结果，将估计磁通矢量的长度调整为更长或更短。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2010282961A

公开(公告)日：2010-12-16

申请号：JP2010119188

申请日：2010-05-25

Applicant: Abb Technology Ag ,  アーベーベー・テヒノロギー・アーゲー

Inventor： DAIS ANSGAR ,  CHRISTEN MICHAEL

IPC: H01B17/40 ,  H01B17/26 ,  H02G3/30 ,  H05K7/20

CPC classification number: H01F27/04 ,  H01F27/12 ,  Y10T29/49117

Abstract: PROBLEM TO BE SOLVED: To provide an electrical conductor for a high-current bushing, which has a compact design and is reduced in electrical loss. SOLUTION: The electrical conductor includes a conductor piece 30, and the conductor piece extends along an axis A and has a cylindrical envelope surface and two electrical connections 10 and 20. One 10 of the two electrical connections has two contact surfaces 11 and 11' which are aligned parallel to one another. This is achieved, in part, because the other 20 of the two electrical connections is connected without a joint to the conductor piece 30, and the electrical connection 10 is hollow and, at right angles to the axis A, has an oval profile with two longitudinal faces which form the two contact surfaces. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种具有紧凑设计并减少电损耗的大电流衬套的导电体。 电导体包括导体片30，导体片沿着轴线A延伸并且具有圆柱形包络面和两个电连接10和20.两个电连接中的一个具有两个接触表面11和 11'，它们彼此平行对准。 这部分地是由于两个电连接中的另外20个连接到导体片30而没有接头，并且电连接10是中空的，并且与轴线A成直角的椭圆形轮廓具有两个 形成两个接触表面的纵向面。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010263215A

公开(公告)日：2010-11-18

申请号：JP2010104715

申请日：2010-04-30

Applicant: Abb Technology Ag ,  アーベーベー・テヒノロギー・アーゲー

Inventor： STORASTA LIUTAURAS ,  RAHIMO MUNAF ,  VON ARX CHRISTOPH ,  KOPTA ARNOST ,  SCHNELL RAFFAEL

IPC: H01L29/739 ,  H01L27/04 ,  H01L29/78

CPC classification number: H01L29/0834 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/7397

Abstract: PROBLEM TO BE SOLVED: To provide an opposite conductivity type semiconductor device having improved electrical and thermal property. SOLUTION: A reverse conducting type semiconductor device 200 including an electrically active region has a free wheel diode and an insulation gate bipolar transistor on a common wafer 100. A part of the wafer 100 forms a base layer 101 having the thickness of a base layer 102. A first layer 1 of a first conductive type having at least one first region 10 and a second layer 2 of a second conductive type having at least one second region 20 and one third region 22 are alternately arranged on the collector side 103. Each region has a region area of region width 11, 21, and 23 wherein the periphery is surrounded by a region boundary. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供具有改善的电和热性能的相反导电型半导体器件。 解决方案：包括电活性区域的反向导电型半导体器件200在公共晶片100上具有续流二极管和绝缘栅双极晶体管。晶片100的一部分形成具有厚度为 具有至少一个第一区域10的第一导电类型的第一层1和具有至少一个第二区域20和一个第三区域22的第二导电类型的第二层2交替地布置在集电极侧103上 每个区域具有区域宽度11,21和23的区域区域，其中周边被区域边界包围。 版权所有（C）2011，JPO＆INPIT