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    Modulation circuit and semiconductor device including the same
    1.
    发明授权
    Modulation circuit and semiconductor device including the same 有权
    调制电路和包括其的半导体器件

    公开(公告)号：US09350295B2

    公开(公告)日：2016-05-24

    申请号：US12948225

    申请日：2010-11-17

    Applicant: Koichiro Kamata

    Inventor： Koichiro Kamata

    IPC: H01L29/786 ,  H03C1/36

    CPC classification number: H01L29/7869 ,  G06K19/07775 ,  H01L23/66 ,  H01L27/0629 ,  H01L28/20 ,  H01L28/40 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2223/6677 ,  H03C1/36 ,  H04M2201/04 ,  H04M2201/06

    Abstract: A modulation circuit includes a load and a transistor serving as a switch. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. The off-state current of the transistor is 1×10−13 A or less. A modulation circuit includes a load, a transistor serving as a switch, and a diode. The load, the transistor, and the diode are connected in series between the terminals of an antenna. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. An off-state current of the transistor is 1×10−13 A or less. On/off of the transistor is controlled in accordance with a signal inputted to a gate of the transistor. The load is a resistor, a capacitor, or a combination of a resistor and a capacitor.

    Abstract translation: 调制电路包括负载和用作开关的晶体管。 该晶体管具有氢浓度为5×1019 / cm3以下的氧化物半导体层。 晶体管的截止电流为1×10-13A或更小。 调制电路包括负载，用作开关的晶体管和二极管。 负载，晶体管和二极管串联连接在天线的端子之间。 该晶体管具有氢浓度为5×1019 / cm3以下的氧化物半导体层。 晶体管的截止电流为1×10-13A或更小。 根据输入到晶体管的栅极的信号来控制晶体管的导通/截止。 负载是电阻器，电容器或电阻器和电容器的组合。

    MODULATION CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
    2.
    发明申请
    MODULATION CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME 审中-公开
    调制电路和半导体器件包括它们

    公开(公告)号：US20160336455A1

    公开(公告)日：2016-11-17

    申请号：US15159182

    申请日：2016-05-19

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Koichiro KAMATA

    IPC: H01L29/786 ,  G06K19/077 ,  H01L23/66 ,  H01L27/06 ,  H01L49/02

    CPC classification number: H01L29/7869 ,  G06K19/07775 ,  H01L23/66 ,  H01L27/0629 ,  H01L28/20 ,  H01L28/40 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2223/6677 ,  H03C1/36 ,  H04M2201/04 ,  H04M2201/06

    Abstract: A modulation circuit includes a load and a transistor serving as a switch. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. The off-state current of the transistor is 1×10−13 A or less. A modulation circuit includes a load, a transistor serving as a switch, and a diode. The load, the transistor, and the diode are connected in series between the terminals of an antenna. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. An off-state current of the transistor is 1×10−13 A or less. On/off of the transistor is controlled in accordance with a signal inputted to a gate of the transistor. The load is a resistor, a capacitor, or a combination of a resistor and a capacitor.

    Abstract translation: 调制电路包括负载和用作开关的晶体管。 该晶体管具有氢浓度为5×1019 / cm3以下的氧化物半导体层。 晶体管的截止电流为1×10-13A或更小。 调制电路包括负载，用作开关的晶体管和二极管。 负载，晶体管和二极管串联连接在天线的端子之间。 该晶体管具有氢浓度为5×1019 / cm3以下的氧化物半导体层。 晶体管的截止电流为1×10-13A或更小。 根据输入到晶体管的栅极的信号来控制晶体管的导通/截止。 负载是电阻器，电容器或电阻器和电容器的组合。

    MODULATION CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
    3.
    发明申请
    MODULATION CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME 有权
    调制电路和半导体器件包括它们

    公开(公告)号：US20110121911A1

    公开(公告)日：2011-05-26

    申请号：US12948225

    申请日：2010-11-17

    Applicant: Koichiro KAMATA

    Inventor： Koichiro KAMATA

    IPC: H03C1/00

    CPC classification number: H01L29/7869 ,  G06K19/07775 ,  H01L23/66 ,  H01L27/0629 ,  H01L28/20 ,  H01L28/40 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2223/6677 ,  H03C1/36 ,  H04M2201/04 ,  H04M2201/06

    Abstract: A modulation circuit includes a load and a transistor serving as a switch. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. The off-state current of the transistor is 1×10−13 A or less. A modulation circuit includes a load, a transistor serving as a switch, and a diode. The load, the transistor, and the diode are connected in series between the terminals of an antenna. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. An off-state current of the transistor is 1×10−13 A or less. On/off of the transistor is controlled in accordance with a signal inputted to a gate of the transistor. The load is a resistor, a capacitor, or a combination of a resistor and a capacitor.

    Abstract translation: 调制电路包括负载和用作开关的晶体管。 该晶体管具有氢浓度为5×1019 / cm3以下的氧化物半导体层。 晶体管的截止电流为1×10-13A或更小。 调制电路包括负载，用作开关的晶体管和二极管。 负载，晶体管和二极管串联连接在天线的端子之间。 该晶体管具有氢浓度为5×1019 / cm3以下的氧化物半导体层。 晶体管的截止电流为1×10-13A或更小。 根据输入到晶体管的栅极的信号来控制晶体管的导通/截止。 负载是电阻器，电容器或电阻器和电容器的组合。

    Modulation circuit and semiconductor device including the same
    10.
    发明专利
    Modulation circuit and semiconductor device including the same 有权
    调制电路和包括其的半导体器件

    公开(公告)号：JP2011130424A

    公开(公告)日：2011-06-30

    申请号：JP2010255066

    申请日：2010-11-15

    Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

    Inventor： KAMATA KOICHIRO

    IPC: H03C1/36 ,  G06K19/07 ,  H01L29/786

    CPC classification number: H01L29/7869 ,  G06K19/07775 ,  H01L23/66 ,  H01L27/0629 ,  H01L28/20 ,  H01L28/40 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2223/6677 ,  H03C1/36 ,  H04M2201/04 ,  H04M2201/06

    Abstract: PROBLEM TO BE SOLVED: To reduce power consumption of a modulation circuit, and to reduce power consumption of a semiconductor device having the modulation circuit by reducing power consumption of the modulation circuit. SOLUTION: A modulation circuit includes a load and a transistor serving as a switch. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×10 19 /cm 3 or less. A off-state current of the transistor is 1×10 -13 A or less. Otherwise, a modulation circuit includes a load, a transistor serving as a switch, and a diode. The load, the transistor and the diode are connected in series between terminals of an antenna. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×10 19 /cm 3 or less. An off-state current of the transistor is 1×10 -13 A or less. On/off of the transistor is controlled in accordance with a signal inputted to a gate of the transistor. The load is a resistor, a capacitor, or a combination of a resistor and a capacitor. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：为了降低调制电路的功耗，并且通过降低调制电路的功耗来降低具有调制电路的半导体器件的功耗。 解决方案：调制电路包括负载和用作开关的晶体管。 晶体管具有其中氢浓度为5×10 19 / cm 3 / SP> 3以下的氧化物半导体层。 晶体管的截止电流为1×10 -13 A或更小。 否则，调制电路包括负载，用作开关的晶体管和二极管。 负载，晶体管和二极管在天线的端子之间串联连接。 晶体管具有其中氢浓度为5×10 19 / cm 3 / SP> 3以下的氧化物半导体层。 晶体管的截止电流为1×10 -13 A或更小。 根据输入到晶体管的栅极的信号来控制晶体管的导通/截止。 负载是电阻器，电容器或电阻器和电容器的组合。 版权所有（C）2011，JPO＆INPIT

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