Phospholipid-analogous compounds
    2.
    发明授权
    Phospholipid-analogous compounds 有权
    磷脂类似物

    公开(公告)号:US06545169B1

    公开(公告)日:2003-04-08

    申请号:US10025778

    申请日:2001-12-26

    Inventor: Hans-Jörg Eibl

    Abstract: Phospholipid-analogous compounds of the general formula (I) in which A where R1 and R2 are, independently of one another, hydrogen, a saturated or unsaturated acyl or alkyl radical which can optionally be branched or/and substituted, where the total of the carbon atoms in the acyl and alkyl is 16 to 44 C atoms, s is an integer from 0 to 8, c is a radical of a primary or secondary alcohol of the formula RO—, where R is a saturated or unsaturated alkyl radical, mainly with cis double bond, of from 12 to 30 carbon atoms, n is an integer from 2 to 8, R3 a can be 1,2-dihydroxypropyl or b can be alkyl with 1 to 3 C atoms when z is>0 or c can be alkyl with 1 to 3 carbon atoms when n≠2 and z=0, m is 1 or 2, x is an integer from 0 to 8, y is 1 for z=1 to 5 or is 1 to 4 for z=1 z is an integer from 0 to 5, are novel and are suitable as liposome constituents, solubilizers and pharmaceuticals.

    Abstract translation: 其中AwhereR1和R2彼此独立地是氢,可任选被支化或/和取代的饱和或不饱和酰基或烷基的通式(I)的磷脂类似化合物,其中碳原子总数 在酰基和烷基中是16至44个C原子,s是0至8的整数,c是式RO-的伯或仲醇的基团,其中R是饱和或不饱和的烷基,主要是顺式 双键,12至30个碳原子,n为2至8的整数,当z> 0时,R 3a可为1,2-二羟基丙基,可为具有1至3个C原子的烷基,或者可以是具有1至 3个碳原子,当n <2且z = 0时,m为1或2,x为0至8的整数,y为1,对于z = 1至5 oris 1至4,z = 1 z为0 至5,是新颖的,并且适合作为脂质体成分,增溶剂和药物。

    Pattern formation method and surface treating agent
    6.
    发明授权
    Pattern formation method and surface treating agent 失效
    图案形成方法和表面处理剂

    公开(公告)号:US06258972B1

    公开(公告)日:2001-07-10

    申请号:US08691124

    申请日:1996-08-01

    CPC classification number: G03F7/0751

    Abstract: To the surface of a semiconductor substrate made of silicon, isopropenoxytrimethylsilane is supplied as a surface treating agent to render the surface of the semiconductor substrate hydrophobic and increase adhesion to the semiconductor substrate. Thus, Si(CH3)3 (trimethylsilyl group) is substituted for the hydrogen atom of an OH group on the surface of the semiconductor substrate, resulting in (CH3)2CO (acetone). Subsequently, a chemically amplified resist is applied to the surface of the semiconductor substrate and exposed to light by using a desired mask, followed sequentially by PEB and development for forming a pattern. Since the surface treating agent does not generate ammonia, there can be formed a pattern in excellent configuration with no insoluble skin layer formed thereon.

    Abstract translation: 向由硅制成的半导体衬底的表面提供异丙烯氧基三甲基硅烷作为表面处理剂,使半导体衬底的表面疏水化并增加对半导体衬底的粘合性。 因此,将Si(CH 3)3(三甲基甲硅烷基)取代为半导体衬底的表面上的OH基的氢原子,得到(CH 3)2 CO(丙酮)。 随后,通过使用所需的掩模将化学放大型抗蚀剂施加到半导体衬底的表面并暴露于光,然后依次由PEB和显影形成图案。 由于表面处理剂不产生氨,因此可以形成具有优异构型的图案,其上不形成不溶性表皮层。

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