公开(公告)号：US20110151597A1

公开(公告)日：2011-06-23

申请号：US12653864

申请日：2009-12-18

Applicant: Chih-Chung Chang ,  Jian-Chang Lin ,  Wen-Sheng Wu ,  Ching-Lin Chang ,  Chih-Yang Tsai

Inventor： Chih-Chung Chang ,  Jian-Chang Lin ,  Wen-Sheng Wu ,  Ching-Lin Chang ,  Chih-Yang Tsai

IPC: H01L21/66 ,  G01N23/04 ,  H01J37/26 ,  G01N23/00 ,  G01R31/08

CPC classification number: H01J37/26 ,  G01R31/2894 ,  G01R31/303 ,  H01J37/252 ,  H01J37/3056 ,  H01J2237/3109 ,  H01J2237/31745 ,  H01L22/14 ,  H01L22/20

Abstract: An analysis method for a semiconductor device is described. The semiconductor device having an abnormal region is provided. Thereafter, a focused ion beam microscope analysis process is performed to the abnormal region, wherein the result of the focused ion beam microscope analysis process shows that the abnormal region has a defect therein. After the focused ion beam microscope analysis process, an electrical property measurement step is performed to the abnormal region, so as to determine whether the defect in the abnormal region is a device failure root cause or not.

Abstract translation: 对半导体装置的分析方法进行说明。 提供具有异常区域的半导体器件。 此后，对异常区域进行聚焦离子束显微镜分析处理，其中聚焦离子束显微镜分析处理的结果表明异常区域具有缺陷。 在聚焦离子束显微镜分析处理之后，对异常区域进行电性能测量步骤，以确定异常区域中的缺陷是否是设备故障根本原因。

公开(公告)号：US08093074B2

公开(公告)日：2012-01-10

申请号：US12653864

申请日：2009-12-18

Applicant: Chih-Chung Chang ,  Jian-Chang Lin ,  Wen-Sheng Wu ,  Ching-Lin Chang ,  Chih-Yang Tsai

Inventor： Chih-Chung Chang ,  Jian-Chang Lin ,  Wen-Sheng Wu ,  Ching-Lin Chang ,  Chih-Yang Tsai

IPC: H01L21/66

CPC classification number: H01J37/26 ,  G01R31/2894 ,  G01R31/303 ,  H01J37/252 ,  H01J37/3056 ,  H01J2237/3109 ,  H01J2237/31745 ,  H01L22/14 ,  H01L22/20

Abstract: An analysis method for a semiconductor device is described. The semiconductor device having an abnormal region is provided. Thereafter, a focused ion beam microscope analysis process is performed to the abnormal region, wherein the result of the focused ion beam microscope analysis process shows that the abnormal region has a defect therein. After the focused ion beam microscope analysis process, an electrical property measurement step is performed to the abnormal region, so as to determine whether the defect in the abnormal region is a device failure root cause or not.

Abstract translation: 对半导体装置的分析方法进行说明。 提供具有异常区域的半导体器件。 此后，对异常区域进行聚焦离子束显微镜分析处理，其中聚焦离子束显微镜分析处理的结果表明异常区域具有缺陷。 在聚焦离子束显微镜分析处理之后，对异常区域进行电性能测量步骤，以确定异常区域中的缺陷是否是设备故障根本原因。