Abstract:
An optical module box made of aluminum that has a reworkable glass-sealed fiber feedthru is disclosed. A fiber is inserted through a glass seal and a C-seal for hermetically sealing an opening in the optical module box. In a first embodiment, a module box employing a single-fiber fiber feedthru is described. In a second embodiment, a module box employing a 2-fiber feedthru is described. In a third embodiment, a module box employing a ribbon fiber feedthru is described. A module box having an opening with a single-fiber feedthru, comprising a C-seal; a glass sealed feedthru having a front tube and a back tube, the back tube of the glass sealed feedthru extending through the C-seal; and a fiber passing through the glass sealed feedthru and the C-seal, thereby hermetically sealed into the opening of the module box.
Abstract:
A light emitting diode device comprises a copper substrate having multiple light emitting regions, multiple dies and encapsulation. Each light emitting region has a die pad and at least one electrode connected together and encapsulant covering the light emitting region. The dies are respectively mounted on the die pads and are wire bonded to the corresponding electrode or electrodes. A step defining a gap is applied to the substrate to form multiple light emitting regions, and each light emitting region has a die pad and electrodes. Therefore, the present invention can simplify the steps for fabricating die pad and electrodes to increase the production rate of LED devices or LED display modules.
Abstract:
An analysis method for a semiconductor device is described. The semiconductor device having an abnormal region is provided. Thereafter, a focused ion beam microscope analysis process is performed to the abnormal region, wherein the result of the focused ion beam microscope analysis process shows that the abnormal region has a defect therein. After the focused ion beam microscope analysis process, an electrical property measurement step is performed to the abnormal region, so as to determine whether the defect in the abnormal region is a device failure root cause or not.
Abstract:
An analysis method for a semiconductor device is described. The semiconductor device having an abnormal region is provided. Thereafter, a focused ion beam microscope analysis process is performed to the abnormal region, wherein the result of the focused ion beam microscope analysis process shows that the abnormal region has a defect therein. After the focused ion beam microscope analysis process, an electrical property measurement step is performed to the abnormal region, so as to determine whether the defect in the abnormal region is a device failure root cause or not.
Abstract:
An optical module box made of aluminum that has a reworkable glass-sealed fiber feedthru is disclosed. A fiber is inserted through a glass seal and a C-seal for hermetically sealing an opening in the optical module box. In a first embodiment, a module box employing a single-fiber fiber feedthru is described. In a second embodiment, a module box employing a 2-fiber feedthru is described. In a third embodiment, a module box employing a ribbon fiber feedthru is described. A module box having an opening with a single-fiber feedthru, comprising a C-seal; a glass sealed feedthru having a front tube and a back tube, the back tube of the glass sealed feedthru extending through the. C-seal; and a fiber passing through the glass sealed feedthru and the C-seal, thereby hermetically sealed into the opening of the module box.