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    Wafer imaging and processing method and apparatus
    2.
    发明授权
    Wafer imaging and processing method and apparatus 有权
    晶圆成像及处理方法及装置

    公开(公告)号：US09546955B2

    公开(公告)日：2017-01-17

    申请号：US14806519

    申请日：2015-07-22

    Applicant: BT IMAGING PTY LTD.

    Inventor： Thorsten Trupke ,  Robert A. Bardos

    IPC: G01N21/63 ,  H01L21/66 ,  H01L31/18 ,  H04N1/04 ,  H04N7/18 ,  G01N21/64 ,  G01N21/95 ,  G06T7/00 ,  G01N33/00 ,  H02S50/10

    CPC classification number: G01N21/63 ,  G01N21/6489 ,  G01N21/9505 ,  G01N2021/646 ,  G01N2033/0095 ,  G06T7/0004 ,  G06T2207/30148 ,  H01L22/12 ,  H01L31/18 ,  H01L2924/0002 ,  H02S50/10 ,  H01L2924/00

    Abstract: A method is disclosed whereby luminescence images are captured from as-cut or partially processed bandgap materials such as multicrystalline silicon wafers. These images are then processed to provide information about defects such as dislocations within the bandgap material. The resultant information is then utilized to predict various key parameters of a solar cell manufactured from the bandgap material, such as open circuit voltage and short circuit current. The information may also be utilized to apply a classification to the bandgap material. The methods can also be used to adjust or assess the effect of additional processing steps, such as annealing, intended to reduce the density of defects in the bandgap materials.

    Abstract translation: 公开了一种方法，其中从切割或部分处理的带隙材料如多晶硅晶片捕获发光图像。 然后处理这些图像以提供有关缺陷的信息，例如带隙材料内的位错。 然后将所得到的信息用于预测由带隙材料制造的太阳能电池的各种关键参数，例如开路电压和短路电流。 该信息也可用于将带状物分类应用于带隙材料。 该方法还可用于调整或评估附加处理步骤（例如退火）的作用，旨在降低带隙材料中缺陷的密度。

    Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials
    4.
    发明授权
    Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials 有权
    在半导体材料的光致发光测量中分离掺杂密度和少数载流子寿命

    公开(公告)号：US09157863B2

    公开(公告)日：2015-10-13

    申请号：US14256480

    申请日：2014-04-18

    Applicant: BT Imaging Pty Ltd

    Inventor： Thorsten Trupke

    IPC: G01N21/64 ,  H01L21/66

    CPC classification number: G01N21/6489 ,  G01N2201/06113 ,  G01N2201/10 ,  H01L22/12

    Abstract: Methods are presented for separating the effects of background doping density and effective minority carrier lifetime on photoluminescence (PL) generated from semiconductor materials. In one embodiment the background doping density is measured by another technique, enabling PL measurements to be analyzed in terms of effective minority carrier lifetime. In another embodiment the effective lifetime is measured by another technique, enabling PL measurements to be analyzed in terms of background doping density. In another embodiment, the effect of background doping density is removed by calculating intensity ratios of two PL measurements obtained in different spectral regions, or generated by different excitation wavelengths. The methods are particularly useful for bulk samples such as bricks or ingots of silicon, where information can be obtained over a much wider range of bulk lifetime values than is possible with thin, surface-limited samples such as silicon wafers. The methods may find application in solar cell manufacturing.

    Abstract translation: 提出了用于分离背景掺杂密度和有效少数载流子寿命对从半导体材料产生的光致发光（PL）的影响的方法。 在一个实施方案中，通过另一种技术来测量背景掺杂密度，使得可以根据有效的少数载流子寿命来分析PL测量。 在另一个实施例中，通过另一技术来测量有效寿命，使得能够根据背景掺杂密度来分析PL测量。 在另一个实施方案中，通过计算在不同光谱区域中获得或由不同激发波长产生的两个PL测量的强度比来去除背景掺杂浓度的影响。 这些方法对于诸如硅砖的砖块或锭块的体积样品特别有用，其中可以获得比在薄的表面限制样品（例如硅晶片）上更大范围的体寿命值的信息。 该方法可应用于太阳能电池制造。

    Methods for inspecting semiconductor wafers
    5.
    发明授权
    Methods for inspecting semiconductor wafers 有权

    公开(公告)号：US10241051B2

    公开(公告)日：2019-03-26

    申请号：US15851993

    申请日：2017-12-22

    Applicant: BT IMAGING PTY LTD.

    Inventor： Thorsten Trupke ,  Juergen Weber

    IPC: G01J3/00 ,  G01N21/64 ,  G01N21/95 ,  G01R31/265

    Abstract: Methods and systems are presented for analyzing semiconductor materials as they progress along a production line, using photoluminescence images acquired using line-scanning techniques. The photoluminescence images can be analyzed to obtain spatially resolved information on one or more properties of said material, such as lateral charge carrier transport, defects and the presence of cracks. In one preferred embodiment the methods and systems are used to obtain series resistance images of silicon photovoltaic cells without making electrical contact with the sample cell.

    Method and system for testing indirect bandgap semiconductor devices using luminescence imaging
    6.
    发明授权
    Method and system for testing indirect bandgap semiconductor devices using luminescence imaging 有权
    使用发光成像测试间接带隙半导体器件的方法和系统

    公开(公告)号：US09482625B2

    公开(公告)日：2016-11-01

    申请号：US14206225

    申请日：2014-03-12

    Applicant: BT Imaging Pty Ltd

    Inventor： Thorsten Trupke ,  Robert Andrew Bardos

    IPC: G01N21/95 ,  G01N21/64 ,  G01N21/66 ,  G01N21/956 ,  H01L31/0224

    CPC classification number: H02S50/15 ,  G01N21/64 ,  G01N21/6489 ,  G01N21/66 ,  G01N21/9501 ,  G01N21/956 ,  H01L31/022425

    Abstract: Embodiments of methods and systems for identifying or determining spatially resolved properties in indirect bandgap semiconductor devices such as solar cells are described. In one embodiment, spatially resolved properties of an indirect bandgap semiconductor device are determined by externally exciting the indirect bandgap semiconductor device to cause the indirect bandgap semiconductor device to emit luminescence (110), capturing images of luminescence emitted from the indirect bandgap semiconductor device in response to the external excitation (120), and determining spatially resolved properties of the indirect bandgap semiconductor device based on a comparison of relative intensities of regions in one or more of the luminescence images (130).

    Abstract translation: 描述了用于识别或确定诸如太阳能电池的间接带隙半导体器件中的空间分辨特性的方法和系统的实施例。 在一个实施例中，间接带隙半导体器件的空间分辨性质通过外部激发间接带隙半导体器件来确定，以使间接带隙半导体器件发射发光（110），从而响应于从间接带隙半导体器件发射的发光的图像 基于一个或多个发光图像（130）中的区域的相对强度的比较来确定间接带隙半导体器件的空间分辨特性。

    METHODS FOR INSPECTING SEMICONDUCTOR WAFERS
    7.
    发明申请
    METHODS FOR INSPECTING SEMICONDUCTOR WAFERS 有权
    检测半导体波形的方法

    公开(公告)号：US20150168303A1

    公开(公告)日：2015-06-18

    申请号：US14411915

    申请日：2013-07-05

    Applicant: BT IMAGING PTY LTD.

    Inventor： Thorsten Trupke ,  Juergen Weber

    IPC: G01N21/64 ,  G01R31/265

    CPC classification number: G01N21/6489 ,  G01N21/6456 ,  G01N21/9501 ,  G01N2021/646 ,  G01N2201/062 ,  G01R31/2656

    Abstract: Methods and systems are presented for analysing semiconductor materials as they progress along a production line, using photoluminescence images acquired using line-scanning techniques. The photoluminescence images can be analysed to obtain spatially resolved information on one or more properties of said material, such as lateral charge carrier transport, defects and the presence of cracks. In one preferred embodiment the methods and systems are used to obtain series resistance images of silicon photovoltaic cells without making electrical contact with the sample cell.

    Abstract translation: 介绍了使用线扫描技术获得的光致发光图像，分析半导体材料在生产线上进行分析的方法和系统。 可以分析光致发光图像以获得关于所述材料的一种或多种性质的空间分辨信息，例如横向载流子传输，缺陷和裂纹的存在。 在一个优选实施例中，方法和系统用于获得硅光伏电池的串联电阻图像，而不与样品池电接触。

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