公开(公告)号：US09885662B2

公开(公告)日：2018-02-06

申请号：US14411915

申请日：2013-07-05

Applicant: BT Imaging Pty Ltd

Inventor： Thorsten Trupke ,  Juergen Weber

IPC: G01J3/00 ,  G01N21/64 ,  G01N21/95 ,  G01R31/265

CPC classification number: G01N21/6489 ,  G01N21/6456 ,  G01N21/9501 ,  G01N2021/646 ,  G01N2201/062 ,  G01R31/2656

Abstract: Methods and systems are presented for analyzing semiconductor materials as they progress along a production line, using photoluminescence images acquired using line-scanning techniques. The photoluminescence images can be analyzed to obtain spatially resolved information on one or more properties of said material, such as lateral charge carrier transport, defects and the presence of cracks. In one preferred embodiment the methods and systems are used to obtain series resistance images of silicon photovoltaic cells without making electrical contact with the sample cell.

公开(公告)号：US10241051B2

公开(公告)日：2019-03-26

申请号：US15851993

申请日：2017-12-22

Applicant: BT IMAGING PTY LTD.

Inventor： Thorsten Trupke ,  Juergen Weber

IPC: G01J3/00 ,  G01N21/64 ,  G01N21/95 ,  G01R31/265

Abstract: Methods and systems are presented for analyzing semiconductor materials as they progress along a production line, using photoluminescence images acquired using line-scanning techniques. The photoluminescence images can be analyzed to obtain spatially resolved information on one or more properties of said material, such as lateral charge carrier transport, defects and the presence of cracks. In one preferred embodiment the methods and systems are used to obtain series resistance images of silicon photovoltaic cells without making electrical contact with the sample cell.

公开(公告)号：US20150168303A1

公开(公告)日：2015-06-18

申请号：US14411915

申请日：2013-07-05

Applicant: BT IMAGING PTY LTD.

Inventor： Thorsten Trupke ,  Juergen Weber

IPC: G01N21/64 ,  G01R31/265

CPC classification number: G01N21/6489 ,  G01N21/6456 ,  G01N21/9501 ,  G01N2021/646 ,  G01N2201/062 ,  G01R31/2656

Abstract: Methods and systems are presented for analysing semiconductor materials as they progress along a production line, using photoluminescence images acquired using line-scanning techniques. The photoluminescence images can be analysed to obtain spatially resolved information on one or more properties of said material, such as lateral charge carrier transport, defects and the presence of cracks. In one preferred embodiment the methods and systems are used to obtain series resistance images of silicon photovoltaic cells without making electrical contact with the sample cell.

Abstract translation: 介绍了使用线扫描技术获得的光致发光图像，分析半导体材料在生产线上进行分析的方法和系统。 可以分析光致发光图像以获得关于所述材料的一种或多种性质的空间分辨信息，例如横向载流子传输，缺陷和裂纹的存在。 在一个优选实施例中，方法和系统用于获得硅光伏电池的串联电阻图像，而不与样品池电接触。