公开(公告)号：US20180275082A1

公开(公告)日：2018-09-27

申请号：US15990226

申请日：2018-05-25

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Kevin Dooley ,  Richard Coull ,  Graeme Scott ,  Lorraine Byrne

IPC: G01N27/07

CPC classification number: G01N27/07 ,  B82Y30/00 ,  C25D3/12 ,  C25D5/022 ,  G01N27/048 ,  G01N27/126 ,  G01N27/127

Abstract: A structure for a chemical sensing device includes a plurality of recesses and a plurality of electrically conductive elements located in, and protruding from, the plurality of recesses.

公开(公告)号：US20170084533A1

公开(公告)日：2017-03-23

申请号：US15364240

申请日：2016-11-29

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Kevin Dooley ,  Roger McQuaid ,  Liam Cheevers ,  David Fitzpatrick ,  Lorraine Byrne

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/76802 ,  H01L21/76828 ,  H01L21/76877 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/5329 ,  H01L27/1214 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A dielectric layer includes a reflow via. The reflow via is formed by reflow of the dielectric layer away from a raised feature. An interconnect is in contact with the raised feature through the reflow via.

公开(公告)号：US10078065B2

公开(公告)日：2018-09-18

申请号：US15218952

申请日：2016-07-25

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Kevin Dooley ,  Richard Coull ,  Graeme Scott ,  Lorraine Byrne

IPC: G01N27/07 ,  C25D5/02 ,  G01N27/04

CPC classification number: G01N27/07 ,  B82Y30/00 ,  C25D3/12 ,  C25D5/022 ,  G01N27/048 ,  G01N27/126 ,  G01N27/127

Abstract: A structure for a chemical sensing device includes a plurality of recesses and a plurality of electrically conductive elements located in, and protruding from, the plurality of recesses.

公开(公告)号：US09609755B2

公开(公告)日：2017-03-28

申请号：US13744187

申请日：2013-01-17

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Richard Coull ,  Kevin Dooley ,  David Fitzpatrick

IPC: B32B3/30 ,  B32B5/16 ,  H05K3/10 ,  H05K3/14 ,  H05K3/12 ,  G03F7/00 ,  H05K1/09

CPC classification number: H05K3/1258 ,  G03F7/0002 ,  H05K1/097 ,  H05K2201/09036 ,  H05K2201/09045 ,  Y10T428/24479 ,  Y10T428/24579

Abstract: Devices with nanosized particles deposited on shaped surface geometries include a substrate with an active material of nanosized particles deposited on a surface of the substrate. The active material has an edge formed at a position determined with a shaped geometry of the surface.

公开(公告)号：US09410911B2

公开(公告)日：2016-08-09

申请号：US13868435

申请日：2013-04-23

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Kevin Dooley ,  Richard Coull ,  Graeme Scott ,  Lorraine Byrne

IPC: G01N27/07 ,  C25D5/02 ,  G01N27/04 ,  C25D3/12 ,  G01N27/12 ,  B82Y30/00

CPC classification number: G01N27/07 ,  B82Y30/00 ,  C25D3/12 ,  C25D5/022 ,  G01N27/048 ,  G01N27/126 ,  G01N27/127

Abstract: A structure for a chemical sensing device, the structure comprising at least one electrically conductive element located in, and protruding from, at least one recess. A method of manufacturing the structure includes: (a) providing a template comprising at least one recess having a recess depth; (b) providing an electrically conductive material in the at least one recess; and (c) removing part of the template to decrease the recess depth of the at least one recess, thereby forming said protruding at least one electrically conductive element.

Abstract translation: 一种用于化学感测装置的结构，所述结构包括位于至少一个凹部中并从其突出的至少一个导电元件。 一种制造该结构的方法包括：（a）提供包含至少一个具有凹陷深度的凹部的模板; （b）在所述至少一个凹部中提供导电材料; 和（c）去除所述模板的一部分以减小所述至少一个凹部的凹陷深度，由此形成所述突出的至少一个导电元件。

公开(公告)号：US10571399B2

公开(公告)日：2020-02-25

申请号：US15570363

申请日：2015-07-29

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Steven Barcelo ,  Ning Ge ,  Kevin Dooley ,  Zhiyong Li

IPC: G01N21/64 ,  G01N21/65

Abstract: In one example, an analyte detection package includes a substrate, surface-enhanced luminescence (SEL) structures extending from the substrate and a low wettability housing. The SEL structures have a first wettability for a given liquid. The low wettability housing extends from the substrate to form a chamber between the housing of the substrate about the SEL structures to receive an analyte containing solution. The housing has an inner surface adjacent the chamber, wherein the inner surface has a second wettability for the given liquid less than the first wettability.

公开(公告)号：US20170191176A1

公开(公告)日：2017-07-06

申请号：US15459272

申请日：2017-03-15

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Graeme Scott ,  Kevin Dooley ,  Lorraine Byrne ,  Pat J. Reilly

IPC: C25D1/04 ,  C23C18/16 ,  G03F7/00 ,  H05K3/20 ,  G03F7/038 ,  H05K1/09 ,  H05K3/00 ,  C25D1/00 ,  G03F7/20

CPC classification number: C25D1/04 ,  B82B3/0033 ,  B82Y40/00 ,  C23C18/1633 ,  C25D1/006 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/2004 ,  G03F7/2006 ,  G03F7/2037 ,  G03F7/2039 ,  H05K1/09 ,  H05K3/0023 ,  H05K3/007 ,  H05K3/20 ,  H05K2203/0548 ,  H05K2203/1142 ,  Y10S977/762 ,  Y10S977/882 ,  Y10S977/932

Abstract: Controlling dimensions of nanowires includes lithographically forming a trench in a layer of a polymer resin with a width less than one micrometer where the polymer resin has a thickness less than one micrometer and is deposited over an electrically conductive substrate, depositing a nanowire material within the trench to form a nanowire, and obtaining the nanowire from the trench with a removal mechanism.

公开(公告)号：US09631291B2

公开(公告)日：2017-04-25

申请号：US13752868

申请日：2013-01-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Graeme Scott ,  Kevin Dooley ,  Lorraine Byrne ,  Pat J. Reilly

IPC: C25D1/04 ,  C25D1/00 ,  B82Y40/00

CPC classification number: C25D1/04 ,  B82B3/0033 ,  B82Y40/00 ,  C23C18/1633 ,  C25D1/006 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/2004 ,  G03F7/2006 ,  G03F7/2037 ,  G03F7/2039 ,  H05K1/09 ,  H05K3/0023 ,  H05K3/007 ,  H05K3/20 ,  H05K2203/0548 ,  H05K2203/1142 ,  Y10S977/762 ,  Y10S977/882 ,  Y10S977/932

Abstract: Controlling dimensions of nanowires includes lithographically forming a trench in a layer of a polymer resin with a width less than one micrometer where the polymer resin has a thickness less than one micrometer and is deposited over an electrically conductive substrate, depositing a nanowire material within the trench to form a nanowire, and obtaining the nanowire from the trench with a removal mechanism.

公开(公告)号：US09583432B2

公开(公告)日：2017-02-28

申请号：US14762799

申请日：2013-01-29

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Kevin Dooley ,  Roger McQuaid ,  Liam Cheevers ,  David Fitzpatrick ,  Lorraine Byrne

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768 ,  H01L23/528 ,  H01L27/12

CPC classification number: H01L23/5226 ,  H01L21/76802 ,  H01L21/76828 ,  H01L21/76877 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/5329 ,  H01L27/1214 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A dielectric layer includes a reflow via. The reflow via is formed by reflow of the dielectric layer. An interconnect is in contact through the reflow via.

Abstract translation: 电介质层包括回流通孔。 回流通孔由电介质层的回流形成。 互连通过回流通孔接触。

公开(公告)号：US09780028B2

公开(公告)日：2017-10-03

申请号：US15364240

申请日：2016-11-29

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Kevin Dooley ,  Roger McQuaid ,  Liam Cheevers ,  David Fitzpatrick ,  Lorraine Byrne

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768 ,  H01L23/528 ,  H01L27/12

CPC classification number: H01L23/5226 ,  H01L21/76802 ,  H01L21/76828 ,  H01L21/76877 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/5329 ,  H01L27/1214 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A dielectric layer includes a reflow via. The reflow via is formed by reflow of the dielectric layer away from a raised feature. An interconnect is in contact with the raised feature through the reflow via.