公开(公告)号：US20140209469A1

公开(公告)日：2014-07-31

申请号：US13752868

申请日：2013-01-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Graeme Scott ,  Kevin Dooley ,  Lorraine Byrne ,  Pat J. Reilly

IPC: C25D1/04 ,  B29C41/02

CPC classification number: C25D1/04 ,  B82B3/0033 ,  B82Y40/00 ,  C23C18/1633 ,  C25D1/006 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/2004 ,  G03F7/2006 ,  G03F7/2037 ,  G03F7/2039 ,  H05K1/09 ,  H05K3/0023 ,  H05K3/007 ,  H05K3/20 ,  H05K2203/0548 ,  H05K2203/1142 ,  Y10S977/762 ,  Y10S977/882 ,  Y10S977/932

Abstract: Controlling dimensions of nanowires includes lithographically forming a trench in a layer of a polymer resin with a width less than one micrometer where the polymer resin has a thickness less than one micrometer and is deposited over an electrically conductive substrate, depositing a nanowire material within the trench to form a nanowire, and obtaining the nanowire from the trench with a removal mechanism.

Abstract translation: 纳米线的控制尺寸包括在宽度小于1微米的聚合物树脂层中光刻形成沟槽，其中聚合物树脂具有小于1微米的厚度并沉积在导电衬底上，在沟槽内沉积纳米线材料 形成纳米线，用去除机构从沟槽获得纳米线。

公开(公告)号：US20170191176A1

公开(公告)日：2017-07-06

申请号：US15459272

申请日：2017-03-15

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Graeme Scott ,  Kevin Dooley ,  Lorraine Byrne ,  Pat J. Reilly

IPC: C25D1/04 ,  C23C18/16 ,  G03F7/00 ,  H05K3/20 ,  G03F7/038 ,  H05K1/09 ,  H05K3/00 ,  C25D1/00 ,  G03F7/20

CPC classification number: C25D1/04 ,  B82B3/0033 ,  B82Y40/00 ,  C23C18/1633 ,  C25D1/006 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/2004 ,  G03F7/2006 ,  G03F7/2037 ,  G03F7/2039 ,  H05K1/09 ,  H05K3/0023 ,  H05K3/007 ,  H05K3/20 ,  H05K2203/0548 ,  H05K2203/1142 ,  Y10S977/762 ,  Y10S977/882 ,  Y10S977/932

Abstract: Controlling dimensions of nanowires includes lithographically forming a trench in a layer of a polymer resin with a width less than one micrometer where the polymer resin has a thickness less than one micrometer and is deposited over an electrically conductive substrate, depositing a nanowire material within the trench to form a nanowire, and obtaining the nanowire from the trench with a removal mechanism.

公开(公告)号：US09631291B2

公开(公告)日：2017-04-25

申请号：US13752868

申请日：2013-01-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Graeme Scott ,  Kevin Dooley ,  Lorraine Byrne ,  Pat J. Reilly

IPC: C25D1/04 ,  C25D1/00 ,  B82Y40/00

CPC classification number: C25D1/04 ,  B82B3/0033 ,  B82Y40/00 ,  C23C18/1633 ,  C25D1/006 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/2004 ,  G03F7/2006 ,  G03F7/2037 ,  G03F7/2039 ,  H05K1/09 ,  H05K3/0023 ,  H05K3/007 ,  H05K3/20 ,  H05K2203/0548 ,  H05K2203/1142 ,  Y10S977/762 ,  Y10S977/882 ,  Y10S977/932

Abstract: Controlling dimensions of nanowires includes lithographically forming a trench in a layer of a polymer resin with a width less than one micrometer where the polymer resin has a thickness less than one micrometer and is deposited over an electrically conductive substrate, depositing a nanowire material within the trench to form a nanowire, and obtaining the nanowire from the trench with a removal mechanism.