公开(公告)号：US11751451B2

公开(公告)日：2023-09-05

申请号：US17480145

申请日：2021-09-21

Applicant: JOLED Inc.

Inventor： Atsuhito Murai ,  Eiichi Sato ,  Masanori Miura

IPC: H10K59/131 ,  H10K50/844 ,  H10K59/121 ,  H10K59/12

CPC classification number: H10K59/131 ,  H10K50/844 ,  H10K59/1213 ,  H10K59/1201

Abstract: According to one embodiment, a display device includes a pixel area including pixels each including at least one thin film transistor includes a semiconductor layer and a gate electrode, a first terminal area including a first wiring line disposed thereon connected to the at least one thin film transistor, a first protective film provided on the semiconductor layer, the gate electrode and the first wiring line, a first insulating film provided on the first protective film, a second protective film provided on the first insulating film, a second insulating film provided on the second protective film, a first opening formed in the first terminal area, and partially exposing the first wiring line, and a second opening formed to correspond to the first opening.

公开(公告)号：US11217650B2

公开(公告)日：2022-01-04

申请号：US16209882

申请日：2018-12-04

Applicant: JOLED INC.

Inventor： Yasuhiro Terai ,  Yasuharu Shinokawa ,  Jiro Yamada ,  Atsuhito Murai ,  Masahiko Kondo ,  Noriteru Maeda

IPC: H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L27/32 ,  H01L51/52 ,  H01L27/12

Abstract: A display unit includes a substrate, a first electrode, a second electrode, an organic layer, and an auxiliary electrically-conductive layer. The substrate includes a pixel region including a plurality of pixels and a peripheral region outside the pixel region. The first electrode is provided for each of the plurality of pixels in the pixel region on the substrate. The second electrode is opposed to the first electrode, and is provided common for the plurality of pixels. The organic layer is provided between the second electrode and the first electrode, and includes a light-emitting layer. The auxiliary electrically-conductive layer includes an organic electrically-conductive material, and the auxiliary electrically-conductive layer is disposed in the pixel region on the substrate and is electrically coupled to the second electrode.

公开(公告)号：US11217641B2

公开(公告)日：2022-01-04

申请号：US16209968

申请日：2018-12-05

Applicant: JOLED INC.

Inventor： Atsuhito Murai ,  Jiro Yamada ,  Yasuhiro Terai ,  Masahiko Kondo ,  Noriteru Maeda

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56 ,  H01L27/12

Abstract: A display unit includes multiple pixels, a first electrode, a partition wall, a light emission layer, and a second electrode. The multiple pixels each have a light emission region and a non-light emission region along a first direction. The first electrode is provided in the light emission region in each of the multiple pixels. The partition wall is provided between each two of the pixels that are adjacent to each other in a second direction. The second direction intersects the first direction. The light emission layer covers the first electrode and is provided in the light emission region and the non-light emission region in a continuous manner. The second electrode faces the first electrode across the light emission layer.

公开(公告)号：US10546538B2

公开(公告)日：2020-01-28

申请号：US16112771

申请日：2018-08-27

Applicant: JOLED INC.

Inventor： Atsuhito Murai ,  Jiro Yamada ,  Yasuhiro Terai ,  Masahiko Kondo ,  Noriteru Maeda

IPC: G09G3/3266 ,  G09G3/36 ,  G02F1/1362 ,  G09G3/20 ,  H05K1/18 ,  H01L27/12

Abstract: A display apparatus includes a display panel and a driving circuit. The display panel includes signal lines extending in a column direction, scanning lines extending in a row direction, and lead-out lines extending in the column direction. Each of the lead-out lines intersects with corresponding one of the scanning lines at an intersection and is electrically coupled to the corresponding one of the scanning lines at a node. The node is disposed at the intersection or in a region surrounding the intersection. The driving circuit supplies corresponding one of the signal lines with a signal pulse corresponding to an image signal, and supplies corresponding one of the lead-out lines with a selection pulse having a peak value based on a distance from one end of the corresponding one of the lead-out lines to the corresponding node, after increasing the peak value with an increase in the distance.

公开(公告)号：US11018160B2

公开(公告)日：2021-05-25

申请号：US16434425

申请日：2019-06-07

Applicant: JOLED INC.

Inventor： Ryosuke Ebihara ,  Yasuhiro Terai ,  Atsuhito Murai

IPC: H01L27/14 ,  H01L27/12 ,  H01L27/32

Abstract: A thin-film transistor substrate includes a pixel circuit, an interlayer insulating film, electrodes, and a hard mask metal. The pixel circuit includes a thin film transistor. The interlayer insulating film has contact holes and covers the pixel circuit. The electrodes are exposed above a surface of the interlayer insulating film, and electrically coupled to the pixel circuit via the contact holes. The hard mask metal has openings at portions facing the contact holes and is provided on the surface of the interlayer insulating film.

公开(公告)号：US10811445B2

公开(公告)日：2020-10-20

申请号：US15830503

申请日：2017-12-04

Applicant: JOLED INC.

Inventor： Atsuhito Murai

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L27/32

Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a first transistor. The first transistor includes a first semiconductor layer over the substrate, the first semiconductor layer including poly-silicon. The first transistor further includes a first gate electrode over the first semiconductor layer, the first gate electrode facing the first semiconductor layer. The semiconductor device further includes a second transistor. The second transistor includes a second semiconductor layer over the substrate, the second semiconductor layer including an oxide semiconductor. The second transistor further includes a second gate electrode over the second semiconductor layer, the second gate electrode facing the second semiconductor layer.

公开(公告)号：US11678539B2

公开(公告)日：2023-06-13

申请号：US17534474

申请日：2021-11-24

Applicant: JOLED INC.

Inventor： Yasuhiro Terai ,  Yasuharu Shinokawa ,  Jiro Yamada ,  Atsuhito Murai ,  Masahiko Kondo ,  Noriteru Maeda

IPC: H10K59/131 ,  H10K50/828 ,  H10K50/824 ,  H10K50/86 ,  H01L27/12 ,  H01L27/32 ,  H01L51/52 ,  H10K50/818 ,  H10K102/00

CPC classification number: H01L27/3276 ,  H01L27/124 ,  H01L27/322 ,  H01L51/5218 ,  H01L51/5228 ,  H01L51/5234 ,  H01L51/5284 ,  H01L2251/5315

Abstract: A display unit includes a substrate including a pixel region including a plurality of pixels and a peripheral region. The display unit includes a plurality of first electrodes, wherein each of the plurality of first electrodes is in a corresponding pixel of the plurality of pixels. The display unit includes a second electrode opposed to the first electrode, wherein the second electrode is common for all of the plurality of pixels. The display unit includes an organic layer between the second electrode and the plurality of first electrodes, wherein the organic layer includes a light-emitting layer. The display unit includes a wiring layer between the substrate and the plurality of first electrodes. The display unit includes an auxiliary electrically-conductive layer including an organic electrically-conductive material, wherein the auxiliary electrically-conductive layer is electrically coupled to the second electrode. The auxiliary electrically-conductive layer is in a recess in the wiring layer.

公开(公告)号：US11152447B2

公开(公告)日：2021-10-19

申请号：US16296217

申请日：2019-03-08

Applicant: JOLED Inc.

Inventor： Atsuhito Murai ,  Eiichi Sato ,  Masanori Miura

IPC: H01L27/14 ,  H01L27/32 ,  H01L51/52

Abstract: According to one embodiment, a display device includes a pixel area including pixels each including at least one thin film transistor includes a semiconductor layer and a gate electrode, a first terminal area including a first wiring line disposed thereon connected to the at least one thin film transistor, a first protective film provided on the semiconductor layer, the gate electrode and the first wiring line, a first insulating film provided on the first protective film, a second protective film provided on the first insulating film, a second insulating film provided on the second protective film, a first opening formed in the first terminal area, and partially exposing the first wiring line, and a second opening formed to correspond to the first opening.

公开(公告)号：US10580799B2

公开(公告)日：2020-03-03

申请号：US16186590

申请日：2018-11-12

Applicant: JOLED Inc.

Inventor： Atsuhito Murai ,  Eiichi Sato ,  Masanori Miura

IPC: H01L27/12 ,  H01L51/52 ,  H01L27/32 ,  H01L29/786 ,  H01L29/417 ,  G02F1/1368

Abstract: According to one embodiment, a thin film transistor includes an oxide semiconductor layer provided above an insulating substrate and including a channel region between a source region and a drain region, a first insulating film provided in a region on the oxide semiconductor layer, which corresponds to the channel region, a gate electrode provided on the first insulating film, a first protective film provided on the oxide semiconductor layer, the first insulating film and the gate electrode, as an insulating film containing a metal, a second protective film provided on the first protective film and a third protective film provided on the second protective film, as an insulating film containing a metal.

公开(公告)号：US10319883B2

公开(公告)日：2019-06-11

申请号：US15808931

申请日：2017-11-10

Applicant: JOLED INC.

Inventor： Atsuhito Murai ,  Motohiro Toyota

IPC: H01L33/38 ,  H01L33/40 ,  H01L27/32 ,  H01L27/12 ,  H01L27/15

Abstract: A semiconductor device includes a substrate, a gate electrode, an oxide semiconductor film, a first electrode, a second electrode, and a third electrode. The gate electrode is provided on the substrate. The oxide semiconductor film is provided on the substrate with the gate electrode interposed therebetween. The oxide semiconductor film includes a channel region facing the gate electrode and a low-resistance region adjacent to the channel region. The first electrode contains a constituent material same as that of the gate electrode, and has same thickness as that of the gate electrode. The second electrode has at least a portion facing the first electrode, and contains a constituent material same as that of the oxide semiconductor film. The third electrode has at least a portion provided at a position facing the first electrode with the second electrode interposed therebetween. The third electrode is electrically coupled to the first electrode.