公开(公告)号：US11929291B2

公开(公告)日：2024-03-12

申请号：US17445727

申请日：2021-08-23

Applicant: NOVA LTD.

Inventor： Gil Loewenthal ,  Shay Yogev ,  Yoav Etzioni

IPC: H01L21/66 ,  G01B11/24 ,  G01N21/95 ,  H01L21/311 ,  H01L21/67 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L22/26 ,  G01B11/24 ,  G01N21/9501 ,  H01L21/31111 ,  H01L21/67253 ,  G01B2210/56 ,  H10B41/27 ,  H10B43/27

Abstract: Controlling an etch process applied to a multi-layered structure, by calculating a spectral derivative of reflectance of an illuminated region of interest of a multi-layered structure during an etch process applied to the multi-layered structure, identifying in the spectral derivative a discontinuity that indicates that an edge of a void formed by the etch process at the region of interest has crossed a layer boundary of the multi-layered structure, determining that the crossed layer boundary corresponds to a preselected layer boundary of the multi-layered structure, and applying a predefined control action to the etch process responsive to determining that the crossed layer boundary corresponds to the preselected layer boundary of the multi-layered structure.

公开(公告)号：US11107738B2

公开(公告)日：2021-08-31

申请号：US16349287

申请日：2017-11-16

Applicant: NOVA LTD.

Inventor： Gil Loewenthal ,  Shay Yogev ,  Yoav Etzioni

IPC: H01L21/66 ,  G01B11/24 ,  G01N21/95 ,  H01L21/311 ,  H01L21/67 ,  H01L27/11556 ,  H01L27/11582

Abstract: Controlling an etch process applied to a multi-layered structure, by calculating a spectral derivative of reflectance of an illuminated region of interest of a multi-layered structure during an etch process applied to the multi-layered structure, identifying in the spectral derivative a discontinuity that indicates that an edge of a void formed by the etch process at the region of interest has crossed a layer boundary of the multi-layered structure, determining that the crossed layer boundary corresponds to a preselected layer boundary of the multi-layered structure, and applying a predefined control action to the etch process responsive to determining that the crossed layer boundary corresponds to the preselected layer boundary of the multi -layered structure.