公开(公告)号：US11170943B2

公开(公告)日：2021-11-09

申请号：US16865410

申请日：2020-05-03

Applicant: National Taiwan University of Science and Technology

Inventor： Bohr-Ran Huang ,  Adhimoorthy Saravanan ,  Shyan-Kay Jou

IPC: H01G11/36 ,  H01G11/86 ,  H01G11/24

Abstract: A supercapacitor electrode includes a substrate and at least one nitrogen-doped ultra-nanocrystalline diamond layer. The nitrogen-doped ultra-nanocrystalline diamond layer is disposed on the substrate. The nitrogen-doped ultra-nanocrystalline diamond layer is a dense continuous film. A conductivity of the supercapacitor electrode is 130 S/cm or more. In addition, a manufacturing method of a supercapacitor electrode is provided.

公开(公告)号：US20210296056A1

公开(公告)日：2021-09-23

申请号：US16865410

申请日：2020-05-03

Applicant: National Taiwan University of Science and Technology

Inventor： Bohr-Ran Huang ,  Adhimoorthy Saravanan ,  Shyan-Kay Jou

IPC: H01G11/36 ,  H01G11/24 ,  H01G11/86

Abstract: A supercapacitor electrode includes a substrate and at least one nitrogen-doped ultra-nanocrystalline diamond layer. The nitrogen-doped ultra-nanocrystalline diamond layer is disposed on the substrate. The nitrogen-doped ultra-nanocrystalline diamond layer is a dense continuous film. A conductivity of the supercapacitor electrode is 130 S/cm or more. In addition, a manufacturing method of a supercapacitor electrode is provided.