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    Process for Producing a Metal Device Housed in a Closed Housing within an Integrated Circuit, and Corresponding Integrated Circuit
    3.
    发明申请
    Process for Producing a Metal Device Housed in a Closed Housing within an Integrated Circuit, and Corresponding Integrated Circuit 有权
    用于生产集成电路内的封闭壳体中的金属器件的工艺，以及相应的集成电路

    公开(公告)号：US20140191385A1

    公开(公告)日：2014-07-10

    申请号：US14148884

    申请日：2014-01-07

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Antonio Di-Giacomo

    IPC: H01L23/528 ,  H05K7/02

    CPC classification number: B81C1/00246 ,  B81B2207/015 ,  B81B2207/07 ,  B81B2207/098 ,  B81C2203/0136 ,  B81C2203/0145 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01L23/528 ,  H01L2924/0002 ,  H05K7/02 ,  H01L2924/00

    Abstract: An integrated circuit includes a number of metallization levels separated by an insulating region disposed over a substrate. A housing includes walls formed from metal portions produced in various metallization levels. A metal device is housed in the housing. An aperture is produced in at least one wall of the housing. An external mechanism outside of the housing is configured so as to form an obstacle to diffusion of a fluid out of the housing through the at least one aperture. At least one through-metallization passes through the external mechanism and penetrates into the housing through the aperture in order to make contact with at least one element of the metal device.

    Abstract translation: 集成电路包括由布置在衬底上的绝缘区域分开的多个金属化水平。 壳体包括由各种金属化水平产生的金属部分形成的壁。 金属装置容纳在壳体中。 在壳体的至少一个壁中产生孔。 壳体外部的外部机构构造成阻止流体从壳体扩散通过至少一个孔。 至少一个贯穿金属化通过外部机构并穿过该孔穿透到外壳中，以便与金属装置的至少一个元件接触。

    Electrically controllable integrated switch
    4.
    发明授权
    Electrically controllable integrated switch 有权

    公开(公告)号：US12272509B2

    公开(公告)日：2025-04-08

    申请号：US16680940

    申请日：2019-11-12

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Christian Rivero ,  Pascal Fornara ,  Antonio Di-Giacomo ,  Brice Arrazat

    IPC: H01H59/00 ,  B81C1/00 ,  H01H1/00 ,  H01H57/00 ,  H01L21/822 ,  H01L27/06 ,  H01L23/522

    Abstract: Methods of operating a switching device are provided. The switching device is formed in an interconnect, the interconnect including a plurality of metallization levels, and has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.

    ELECTRICALLY CONTROLLABLE INTEGRATED SWITCH
    5.
    发明申请
    ELECTRICALLY CONTROLLABLE INTEGRATED SWITCH 审中-公开

    公开(公告)号：US20200083011A1

    公开(公告)日：2020-03-12

    申请号：US16680940

    申请日：2019-11-12

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Christian Rivero ,  Pascal Fornara ,  Antonio Di-Giacomo ,  Brice Arrazat

    IPC: H01H59/00 ,  H01H57/00 ,  B81C1/00 ,  H01L27/06 ,  H01H1/00 ,  H01L21/822

    Abstract: Methods of operating a switching device are provided. The switching device is formed in an interconnect, the interconnect including a plurality of metallization levels, and has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.

    Process for Producing a Metal Device Housed in a Closed Housing within an Integrated Circuit, and Corresponding Integrated Circuit
    7.
    发明申请
    Process for Producing a Metal Device Housed in a Closed Housing within an Integrated Circuit, and Corresponding Integrated Circuit 审中-公开
    用于生产集成电路内的封闭壳体中的金属器件的工艺，以及相应的集成电路

    公开(公告)号：US20150203349A1

    公开(公告)日：2015-07-23

    申请号：US14675349

    申请日：2015-03-31

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Antonio Di-Giacomo

    IPC: B81C1/00

    CPC classification number: B81C1/00246 ,  B81B2207/015 ,  B81B2207/07 ,  B81B2207/098 ,  B81C2203/0136 ,  B81C2203/0145 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01L23/528 ,  H01L2924/0002 ,  H05K7/02 ,  H01L2924/00

    Abstract: An integrated circuit includes a number of metallization levels separated by an insulating region disposed over a substrate. A housing includes walls formed from metal portions produced in various metallization levels. A metal device is housed in the housing. An aperture is produced in at least one wall of the housing. An external mechanism outside of the housing is configured so as to form an obstacle to diffusion of a fluid out of the housing through the at least one aperture. At least one through-metallization passes through the external mechanism and penetrates into the housing through the aperture in order to make contact with at least one element of the metal device.

    Abstract translation: 集成电路包括由布置在衬底上的绝缘区域分开的多个金属化水平。 壳体包括由各种金属化水平产生的金属部分形成的壁。 金属装置容纳在壳体中。 在壳体的至少一个壁中产生孔。 壳体外部的外部机构构造成阻止流体从壳体扩散通过至少一个孔。 至少一个贯穿金属化通过外部机构并穿过该孔穿透到外壳中，以便与金属装置的至少一个元件接触。

    Integrated Circuit Provided with a Device for Detecting its Spatial Orientation and/or a Modification of this Orientation
    8.
    发明申请
    Integrated Circuit Provided with a Device for Detecting its Spatial Orientation and/or a Modification of this Orientation 有权
    具有用于检测其空间方向和/或该方向的修改的装置的集成电路

    公开(公告)号：US20150014794A1

    公开(公告)日：2015-01-15

    申请号：US14501537

    申请日：2014-09-30

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Antonio Di-Giacomo ,  Pascal Fornara

    IPC: B81B7/02 ,  B81C1/00 ,  B81B3/00

    CPC classification number: B81B7/02 ,  B81B3/0051 ,  B81B2201/0235 ,  B81B2201/0292 ,  B81C1/00174 ,  B81C1/00246 ,  B81C2203/0714 ,  B81C2203/0771 ,  G01C9/12 ,  G01P13/00 ,  G01P15/135

    Abstract: An integrated circuit includes a mechanical device for detection of spatial orientation and/or of change in orientation of the integrated circuit. The device is formed in the BEOL and includes an accommodation whose sides include metal portions formed within various metallization levels. A mobile metal component is accommodated within the accommodation. A monitor inside the accommodation defines a displacement area for the metal component and includes electrically conductive elements disposed at the periphery of the displacement area. The component is configured so as to, under the action of the gravity, come into contact with the two electrically conductive elements in response to a given spatial orientation of the integrated circuit. A detector is configured to detect an electrical link passing through the component and the electrically conductive elements.

    Abstract translation: 集成电路包括用于检测集成电路的空间取向和/或取向变化的机械装置。 该装置形成在BEOL中并且包括其侧面包括形成在各种金属化水平内的金属部分的容纳物。 移动金属部件容纳在住宿内。 住房内的监视器限定了用于金属部件的位移区域，并且包括设置在位移区域周边的导电元件。 该部件构造成在重力的作用下，响应于集成电路的给定的空间取向与两个导电元件接触。 检测器被配置为检测通过部件和导电元件的电连接。

    Integrated electrical-switching mechanical device having a blocked state
    10.
    发明授权
    Integrated electrical-switching mechanical device having a blocked state 有权

    公开(公告)号：US10026563B2

    公开(公告)日：2018-07-17

    申请号：US14289784

    申请日：2014-05-29

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Antonio Di-Giacomo ,  Christian Rivero ,  Pascal Fornara

    IPC: H01H1/00 ,  H01H61/00 ,  H01H37/00

    Abstract: An integrated circuit, comprising an electrical-switching mechanical device in a housing having at least one first thermally deformable assembly including a beam held in at least two different locations by at least two arms secured to edges of the housing, the beam and the arms being metallic and situated within the same first metallization level and an electrically conductive body, wherein the said first thermally deformable assembly has at least one first configuration at a first temperature and a second configuration when at least one is at a second temperature different from the first temperature, wherein the beam is at a distance from the body in the first configuration and in contact with the said body and immobilized by the said body in the second configuration and establishing or prohibiting an electrical link passing through the body and through the beam.

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