Abstract:
A phosphor coating process for a light-emitting device is described. A light-emitting diode chip is bonded on a substrate. A light-sensitive layer is formed over the light-emitting diode and the substrate. The light-sensitive layer is patterned by a photolithography process to expose an area of the light-emitting diode chip, on which desires a phosphor coating. A phosphor-adhesive material is filled on the area of the light-emitting diode chip.
Abstract:
In one aspect, a light emitting unit comprises: a first semiconductor layer having a first electric property; a second semiconductor layer having a second electric property disposed over the first semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; a first electrode disposed on the second semiconductor layer; a second electrode disposed under the first semiconductor layer; and a phosphor layer disposed on the first semiconductor layer. The phosphor layer covers the active layer and the second semiconductor layer. The first electrode is exposed out of the phosphor layer.
Abstract:
A phosphor coating method for fabricating a light-emitting semiconductor is provided. The phosphor coating method comprises the steps as follows: First a light emitting semiconductor wafer having a plurality of die units formed thereon is provided, and a photoresist is then formed on the light emitting semiconductor wafer to cover the die units. A pattern process is conducted to form a plurality of openings associated with the die units, whereby each die can be exposed via one of the openings. Subsequently, a compound mixed with phosphor is filled into the openings.
Abstract:
A light emitting semiconductor device is provided, wherein the light emitting semiconductor device comprises a substrate, a plurality of flip chips, a heat conductive board and an insulating board. These flip chips are electrically connected on the substrate. The heat conductive board has a protruding portion used to support the substrate. The insulating board has a plurality of connecting pads and an opening, wherein the protruding portion is sheathed in the opening, so as to expose the substrate. The exposed substrate is then electrically connected to the connecting pads.
Abstract:
A light emitting semiconductor device is provided, wherein the light emitting semiconductor device comprises a substrate, a plurality of flip chips, a heat conductive board and an insulating board. These flip chips are electrically connected on the substrate. The heat conductive board has a protruding portion used to support the substrate. The insulating board has a plurality of connecting pads and an opening, wherein the protruding portion is sheathed in the opening, so as to expose the substrate. The exposed substrate is then electrically connected to the connecting pads.
Abstract:
A phosphor coating process for a light-emitting device is described. A light-emitting diode chip is bonded on a substrate. A light-sensitive layer is formed over the light-emitting diode and the substrate. The light-sensitive layer is patterned by a photolithography process to expose an area of the light-emitting diode chip, on which desires a phosphor coating. A phosphor-adhesive material is filled on the area of the light-emitting diode chip.
Abstract:
A phosphor coating method for fabricating a light-emitting semiconductor is provided. The phosphor coating method comprises the steps as follows: First a light emitting semiconductor wafer having a plurality of die units formed thereon is provided, and a photoresist is then formed on the light emitting semiconductor wafer to cover the die units. A pattern process is conducted to form a plurality of openings associated with the die units, whereby each die can be exposed via one of the openings. Subsequently, a compound mixed with phosphor is filled into the openings.
Abstract:
A circuit structure of a package carrier including a plurality of chip pads, a first electrode, a second electrode, a third electrode and a fourth electrode is provided. These chip pads are arranged in an M×N array. A first bonding pad, a second bonding pad, a third bonding pad and a fourth bonding pad are disposed clockwise in the peripheral area of each chip pad in sequence. The orientations of each of the first, second, third, and fourth bonding pads of the (S−1)th row rotated by 90 degrees are equal to the orientations of each of the first, second, third and fourth bonding pads of the Sth row, respectively. The first electrode is connected with each first bonding pad. The second electrode is connected with each second bonding pad. The third electrode is connected with each third bonding pad. The forth electrode is connected with each forth bonding pad.
Abstract:
A phosphor coating method for fabricating a light-emitting semiconductor is provided. The phosphor coating method comprises the steps as follows: First a light emitting semiconductor wafer having a plurality of die units formed thereon is provided, and a photoresist is then formed on the light emitting semiconductor wafer to cover the die units. A pattern process is conducted to form a plurality of openings associated with the die units, whereby each die can be exposed via one of the openings. Subsequently, a compound mixed with phosphor is filled into the openings.
Abstract:
A multi-chip package comprises a plurality of chip pads and a plurality of LED chips. The chip pads are arranged in an M×N array, M and N each a positive integer greater than 1. A peripheral area of each chip pad comprises a respective first bonding pad, a respective second bonding pad, and a respective third bonding pad arranged in sequence in a clockwise direction. A first orientation of the respective first to third bonding pads in a first row of the N rows differs from a second orientation of the respective first to third bonding pads in a second row of the N rows by 90 degrees. Each of the LED chips is disposed on a respective one of the chip pads and electrically connected to two of the respective first to third bonding pads on a same side of the respective LED chip.