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    SELF-ALIGNED METAL OXIDE THIN FILM TRANSISTOR AND METHOD OF MAKING SAME
    1.
    发明申请
    SELF-ALIGNED METAL OXIDE THIN FILM TRANSISTOR AND METHOD OF MAKING SAME 审中-公开
    自对准金属氧化物薄膜晶体管及其制造方法

    公开(公告)号：US20160268444A1

    公开(公告)日：2016-09-15

    申请号：US15162561

    申请日：2016-05-23

    Applicant: Ye Xin Technology Consulting Co., Ltd.

    Inventor： KUO-LUNG FANG ,  YI-CHUN KAO ,  PO-LI SHIH ,  CHIH-LUNG LEE ,  HSIN-HUA LIN

    IPC: H01L29/786 ,  H01L29/66 ,  H01L21/425

    CPC classification number: H01L29/78696 ,  H01L21/425 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/7869

    Abstract: A thin film transistor comprises a substrate, a gate electrode formed on the substrate, an electrically insulating layer covering the gate electrode, a channel layer made of a semiconductor material and formed on the electrically insulating layer, a source electrode formed on a first lateral side of the electrically insulating layer, and a drain electrode formed on an opposite second lateral side of the electrically insulating layer. The source electrode has an inner end covering a first outer end of the channel layer and electrically connecting therewith. The drain electrode has an inner end covering an opposite second outer end of the channel layer and electrically connecting therewith. An area of the channel layer adjacent to and not covered by one of the source electrode and the drain electrode has an electrical conductivity lower than the electrical conductivity of other area of the channel layer.

    Abstract translation: 薄膜晶体管包括基板，形成在基板上的栅电极，覆盖栅电极的电绝缘层，形成在电绝缘层上的由半导体材料制成的沟道层，形成在第一侧面上的源电极 的电绝缘层，以及形成在电绝缘层的相对的第二横向侧上的漏电极。 源电极具有覆盖沟道层的第一外端并与之电连接的内端。 漏电极具有覆盖通道层的相对的第二外端并与之电连接的内端。 与源电极和漏电极中的一个相邻并且未被其覆盖的沟道层的区域的导电率低于沟道层的其它区域的导电率。

    SELF-ALIGNED METAL OXIDE THIN FILM TRANSISTOR AND METHOD OF MAKING SAME
    4.
    发明申请
    SELF-ALIGNED METAL OXIDE THIN FILM TRANSISTOR AND METHOD OF MAKING SAME 有权
    自对准金属氧化物薄膜晶体管及其制造方法

    公开(公告)号：US20160190326A1

    公开(公告)日：2016-06-30

    申请号：US14591189

    申请日：2015-01-07

    Applicant: Ye Xin Technology Consulting Co., Ltd.

    Inventor： KUO-LUNG FANG ,  YI-CHUN KAO ,  PO-LI SHIH ,  CHIH-LUNG LEE ,  HSIN-HUA LIN

    IPC: H01L29/786 ,  H01L29/66

    CPC classification number: H01L29/78696 ,  H01L21/425 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/7869

    Abstract: A method for forming a TFT includes providing a substrate, a gate electrode on the substrate, an electrically insulating layer on the substrate to totally cover the gate electrode, a channel layer on the electrically insulating layer, a first photoresist pattern on the channel layer, a metal layer on the electrically insulating layer, the channel layer and the first photoresist layer, and a second photoresist pattern on the metal layer. A middle portion of the metal layer is then removed to form a source electrode and a drain electrode and to expose the first photoresist pattern and a portion of the channel layer between the first and second photoresist patterns. The exposed portion of the channel layer is then processed to have its electrical conductivity be lowered to thereby reduce a hot-carrier effect of the channel layer.

    Abstract translation: 一种用于形成TFT的方法，包括：在基板上设置基板，栅电极，在基板上形成电绝缘层，以完全覆盖栅电极，电绝缘层上的沟道层，沟道层上的第一光刻胶图案， 电绝缘层上的金属层，沟道层和第一光致抗蚀剂层，以及金属层上的第二光致抗蚀剂图案。 然后去除金属层的中间部分以形成源电极和漏电极，并且在第一和第二光致抗蚀剂图案之间露出第一光致抗蚀剂图案和沟道层的一部分。 然后处理通道层的暴露部分以使其导电性降低，从而降低沟道层的热载流子效应。

    THIN FILM TRANSISTOR AND METHOD OF FABRICATING SAME
    6.
    发明申请
    THIN FILM TRANSISTOR AND METHOD OF FABRICATING SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US20140374746A1

    公开(公告)日：2014-12-25

    申请号：US14307218

    申请日：2014-06-17

    Applicant: Ye Xin Technology Consulting Co., Ltd.

    Inventor： CHIH-LUNG LEE ,  PO-LI SHIH

    IPC: H01L29/786 ,  H01L29/66

    CPC classification number: H01L29/7869 ,  H01L29/66969

    Abstract: A thin film transistor (TFT) includes a gate, a drain, a source, an insulating layer, a metal oxide layer, and an etch stopper layer. The metal oxide layer includes a source area, a drain area, and a channel area. The source is electrically coupled to the source area and the drain is electrically coupled to the drain area. Oxygen ions are implanted into the channel area via a surface treatment process to make an oxygen concentration of the channel area be greater than an oxygen concentration of each of the source area and the drain area.

    Abstract translation: 薄膜晶体管（TFT）包括栅极，漏极，源极，绝缘层，金属氧化物层和蚀刻阻挡层。 金属氧化物层包括源极区域，漏极区域和沟道区域。 源极电耦合到源极区域，漏极电耦合到漏极区域。 通过表面处理工艺将氧离子注入通道区域，以使通道面积的氧浓度大于源极区域和漏极区域中的每一个的氧浓度。

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