公开(公告)号：US09520617B2

公开(公告)日：2016-12-13

申请号：US14211528

申请日：2014-03-14

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC

Inventor： Emanuel I. Cooper

IPC: H01M10/0569 ,  C07D333/48 ,  H01M10/052

CPC classification number: H01M10/0569 ,  C07D333/48 ,  H01M10/052

Abstract: An improved solvent containing sulfolane and at least one dialkyl sulfone, preferably dimethyl sulfone, wherein the improved solvent is a liquid at room temperature and can be used for reaction media and electrochemistry.

Abstract translation: 改进的含有环丁砜和至少一种二烷基砜，优选二甲基砜的溶剂，其中改进的溶剂在室温下为液体，可用于反应介质和电化学。

公开(公告)号：US20160236806A1

公开(公告)日：2016-08-18

申请号：US15140159

申请日：2016-04-27

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.

Inventor： Glenn Tom ,  Greg Nelson ,  Wei Liu ,  Amy Koland ,  Don Ware ,  Daniel J. Durham ,  Tracy M. Momany ,  Chantel Ortega

IPC: B65D1/02 ,  B65D53/02

CPC classification number: B65D1/0215 ,  B29C49/06 ,  B29C49/24 ,  B29C49/58 ,  B29C2049/2404 ,  B29C2049/2477 ,  B29C2049/5837 ,  B29C2049/5841 ,  B29D22/003 ,  B29K2103/04 ,  B29K2105/12 ,  B29K2309/08 ,  B29K2995/0067 ,  B29K2995/0069 ,  B29L2009/001 ,  B29L2031/712 ,  B29L2031/7158 ,  B65D1/023 ,  B65D23/02 ,  B65D53/02 ,  B65D77/06 ,  B65D83/0055 ,  B65D83/14 ,  B65D83/38 ,  B67D1/0462 ,  B67D7/025 ,  B67D2001/0828

Abstract: The present disclosure relates to an integrated liner-based system having an overpack and a liner provided within the overpack, the liner comprising a mouth and a liner wall forming an interior cavity of the liner and having a thickness such that the liner is substantially self-supporting in an expanded state, but is collapsible at a pressure of less than about 20 psi. The liner and overpack may be made by blow molding the liner and the overpack at the same time using nested preforms.

Abstract translation: 本公开内容涉及一种集成的基于衬垫的系统，其具有设置在所述外包装内的外包装和衬里，所述衬里包括形成所述衬里的内部空腔的口和衬里壁，并且具有使得所述衬垫基本上自身的厚度， 支撑在膨胀状态，但是在小于约20psi的压力下可折叠。 衬里和外包装可以通过使用嵌套的预制件同时吹塑衬里和外包装来制造。

公开(公告)号：US20160200975A1

公开(公告)日：2016-07-14

申请号：US14914418

申请日：2014-08-28

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  ATMI TAIWAN CO., LTD.

Inventor： Enamuel I. COOPER ,  Li-Min CHEN ,  Steven LIPPY ,  Chia-Jung HSU ,  Sheng-hung TU ,  Chieh Ju WANG

IPC: C09K13/00

CPC classification number: C09K13/00 ,  C09K13/06 ,  H01L21/31111 ,  H01L21/32134

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant, one etchant, and one activator to enhance the etch rate of titanium nitride.

Abstract translation: 可用于相对于其上具有相同材料的微电子器件相对于绝缘材料选择性去除氮化钛和/或光刻胶蚀刻残余材料的组合物。 去除组合物含有至少一种氧化剂，一种蚀刻剂和一种活化剂以增强氮化钛的蚀刻速率。

公开(公告)号：US20160159519A1

公开(公告)日：2016-06-09

申请号：US14959679

申请日：2015-12-04

Applicant: Advanced Technology Materials, Inc.

Inventor： Richard D. Chism ,  Amy Koland ,  Wei Liu ,  John Davis ,  Glenn Tom ,  Matthew Kusz ,  Karl Boggs

IPC: B65D25/16 ,  B65D85/00 ,  B31B41/00 ,  B65D77/06

CPC classification number: B65D25/16 ,  B31B70/00 ,  B31B2160/00 ,  B65D25/14 ,  B65D77/06 ,  B65D85/70 ,  B65D85/84 ,  B67D1/0001 ,  B67D7/0261 ,  B67D7/0283 ,  B67D7/0288 ,  B67D7/78

Abstract: A pressure dispense method and system for reducing the presence of folds for a liquid-filled liner within an overpack while reducing the loads and stresses on the liquid-filled liner. The flexible liner is of a conformal size and shape to the interior space of the overpack so that the flexible liner does not pull downward and away from the interior surface of the overpack when the flexible liner is filled with a liquid. The flexible liner also configured to eliminate folding in upon itself when the liner is filled with a liquid within the overpack.

Abstract translation: 一种压力分配方法和系统，用于减少外包装内的液体填充衬里的褶皱的存在，同时减少充满液体的衬垫上的负载和应力。 柔性衬里具有与外包装的内部空间相适应的尺寸和形状，使得当柔性衬里充满液体时，柔性衬里不会向下拉并远离外包装的内表面。 柔性衬里还构造成当衬垫在外包装内填充液体时，自身消除折叠。

公开(公告)号：US20160130500A1

公开(公告)日：2016-05-12

申请号：US14896197

申请日：2014-06-06

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.

Inventor： Li-Min CHEN ,  Steven LIPPY ,  Emanuel I Cooper ,  Lingyan Song

IPC: C09K13/02 ,  C09K13/00

CPC classification number: C09K13/02 ,  C09K13/00 ,  C11D3/0073 ,  C11D3/044 ,  C11D3/30 ,  C11D3/3942 ,  C11D3/3947 ,  C11D3/3956 ,  C11D7/06 ,  C11D11/0047 ,  C23G1/20 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/31144 ,  H01L21/32134

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., cobalt, ruthenium and copper, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

Abstract translation: 用于相对于金属导电例如钴，钌和铜选择性去除氮化钛和/或光致抗蚀剂蚀刻残余物质的组合物，以及与其上具有相同的微电子器件的绝缘材料。 除去组合物含有至少一种氧化剂和一种蚀刻剂，可含有各种腐蚀抑制剂以确保选择性。

公开(公告)号：US20160107877A1

公开(公告)日：2016-04-21

申请号：US14928591

申请日：2015-10-30

Applicant: Advanced Technology Materials, Inc.

Inventor： Glenn M. TOM ,  Joseph Patrick MENNING ,  Matthew KUSZ ,  Amy KOLAND ,  Donald D. WARE ,  Richard D. CHISM

IPC: B67D7/02

CPC classification number: B67D7/0261 ,  C02F1/001 ,  C02F1/20 ,  C02F2209/40 ,  F17C1/00 ,  F17C2201/0104 ,  F17C2201/0157 ,  F17C2201/054 ,  F17C2201/056 ,  F17C2201/058 ,  F17C2203/0604 ,  F17C2203/0617 ,  F17C2203/0624 ,  F17C2203/0629 ,  F17C2203/0636 ,  F17C2203/066 ,  F17C2203/0685 ,  F17C2205/0142 ,  F17C2205/0165 ,  F17C2205/0169 ,  F17C2205/0323 ,  F17C2205/0326 ,  F17C2205/0335 ,  F17C2205/0338 ,  F17C2205/0341 ,  F17C2205/0373 ,  F17C2205/0382 ,  F17C2205/0385 ,  F17C2205/0391 ,  F17C2209/219 ,  F17C2209/221 ,  F17C2221/03 ,  F17C2223/0123 ,  F17C2223/0153 ,  F17C2223/033 ,  F17C2223/043 ,  F17C2223/047 ,  F17C2227/0135 ,  F17C2227/0157 ,  F17C2227/0192 ,  F17C2227/0304 ,  F17C2227/0379 ,  F17C2227/041 ,  F17C2250/032 ,  F17C2250/0408 ,  F17C2250/043 ,  F17C2250/0439 ,  F17C2250/0443 ,  F17C2250/0452 ,  F17C2250/0478 ,  F17C2250/0491 ,  F17C2250/0495 ,  F17C2250/072 ,  F17C2260/016 ,  F17C2260/024 ,  F17C2265/012 ,  F17C2265/017 ,  F17C2265/022 ,  F17C2270/05 ,  F17C2270/0518 ,  Y10T137/2708

Abstract: A fluid dispensing system for delivering a gas free chemical. The fluid dispensing system includes a gas separation device that separates a liquid from bubbles entrained in the liquid and accumulating the gas from the bubbles in a reservoir. A level sensor detects if the liquid in the reservoir drops too low, triggering the gas separation device to vent the gas from the reservoir. An empty detect apparatus that detects pressure droop of the liquid may also be implemented for taking appropriate action.

Abstract translation: 用于输送无气体化学品的流体分配系统。 流体分配系统包括气体分离装置，其将液体与夹在液体中的气泡分离，并将气体从储存器中的气泡积聚。 液位传感器检测储液器中的液体是否下降得太低，触发气体分离装置从储存器排出气体。 还可以实施检测液体的压降的空的检测装置，以采取适当的动作。

公开(公告)号：US09256134B2

公开(公告)日：2016-02-09

申请号：US14224656

申请日：2014-03-25

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.

Inventor： David W. Minsek ,  Melissa K. Rath ,  David D. Bernhard ,  Thomas H. Baum

IPC: B08B3/04 ,  G03F7/42 ,  C11D7/06 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  H01L21/311 ,  C11D3/04 ,  C11D3/30 ,  C11D3/39 ,  C11D3/395 ,  C11D3/43 ,  H01L21/02

CPC classification number: C11D3/30 ,  C11D1/72 ,  C11D3/044 ,  C11D3/3947 ,  C11D3/3955 ,  C11D3/3956 ,  C11D3/43 ,  C11D7/06 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/50 ,  C11D11/0047 ,  C23G1/20 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/31116 ,  H01L21/31133 ,  Y10S438/906

Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.

Abstract translation: 本文公开了一种用于半导体处理的组合物和方法。 在一个实施方案中，提供了用于去除光致抗蚀剂的湿清洁组合物。 组合物包含强碱; 氧化剂 和极性溶剂。 在另一个实施例中，提供了一种去除光致抗蚀剂的方法。 该方法包括以下步骤：施加包含约0.1至约30重量％的强碱的湿清洁组合物; 约1至约30重量％的氧化剂; 约20至约95重量％的极性溶剂; 并去除光致抗蚀剂。

公开(公告)号：US20160035580A1

公开(公告)日：2016-02-04

申请号：US14880698

申请日：2015-10-12

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.

Inventor： Emanuel I. COOPER ,  Eileen SPARKS ,  William R. BOWERS ,  Mark A. BISCOTTO ,  Kevin P. YANDERS ,  Michael B. KORZENSKI

IPC: H01L21/311 ,  H01L21/02 ,  C09K13/08

CPC classification number: H01L21/31111 ,  B65D85/70 ,  C09K13/08 ,  G03F7/422 ,  H01L21/0206 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min−1.

Abstract translation: 可用于相对于多晶硅，氧化硅材料和/或硅化物材料从其上具有相同的微电子器件选择性去除氮化硅材料的组合物。 除去组合物包括氟硅酸，硅酸和至少一种有机溶剂。 典型的工艺温度小于约100℃，氮化物与氧化物蚀刻的典型选择性为约200:1至约2000:1。 在典型的工艺条件下，镍基硅化物以及钛和钽氮化物在很大程度上不受影响，多晶硅蚀刻速率小于约1埃min -1。

公开(公告)号：US09109188B2

公开(公告)日：2015-08-18

申请号：US13658415

申请日：2012-10-23

Applicant: Advanced Technology Materials, Inc.

Inventor： William A. Wojtczak ,  Ma. Fatima Seijo ,  David Bernhard ,  Long Nguyen

IPC: C11D3/30 ,  C09K13/00 ,  C09K13/08 ,  C11D7/10 ,  C11D7/26 ,  C11D7/28 ,  C11D7/32 ,  C11D7/34 ,  C11D11/00 ,  C23F11/14 ,  C23G1/10 ,  G03F7/42 ,  H01L21/02 ,  C11D3/32 ,  C11D3/33

CPC classification number: C11D3/30 ,  C09K13/00 ,  C09K13/08 ,  C11D3/32 ,  C11D3/33 ,  C11D7/10 ,  C11D7/264 ,  C11D7/265 ,  C11D7/266 ,  C11D7/28 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3245 ,  C11D7/3254 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047 ,  C23F11/142 ,  C23F11/146 ,  C23G1/103 ,  C23G1/106 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/02074 ,  H01L21/32136

Abstract: A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

公开(公告)号：US09062829B2

公开(公告)日：2015-06-23

申请号：US13966091

申请日：2013-08-13

Applicant: Judith A. Moroco ,  Advanced Technology Materials, Inc.

Inventor： Dennis Brestovansky ,  Michael J. Wodjenski ,  Jose I. Arno ,  J. Donald Carruthers ,  Philip A. Moroco

IPC: B01D53/04 ,  F17C11/00

CPC classification number: B01D53/053 ,  B01D53/0407 ,  B01D2253/102 ,  B01D2253/304 ,  B01D2253/342 ,  B01D2257/40 ,  B01D2257/704 ,  B01D2257/706 ,  B01D2257/93 ,  B01D2258/0216 ,  B01D2259/4525 ,  F17C11/00 ,  F17C13/084 ,  F17C2201/0157 ,  F17C2205/0103 ,  F17C2205/0338 ,  F17C2205/0391 ,  F17C2270/0518 ,  Y02E60/321 ,  Y10T137/0318

Abstract: A fluid storage and dispensing apparatus including a fluid storage and dispensing vessel having a rectangular parallelepiped shape, and an integrated gas cabinet assembly including such fluid storage and dispensing apparatus and/or a point-of-use ventilation gas scrubber in the vented gas cabinet. By the use of physical adsorbent and chemical sorbent media, the gas cabinet can be enhanced in safety of operation, e.g., where the process gas supplied from the gas cabinet is of a toxic or otherwise hazardous character.

Abstract translation: 液体储存和分配设备包括具有长方体形状的流体储存和分配容器，以及在通气气体柜中包括这种流体储存和分配装置和/或使用点的通气气体洗涤器的集成气体柜组件。 通过使用物理吸附剂和化学吸附剂介质，可以提高气柜的操作安全性，例如，从气柜提供的工艺气体具有有毒或其他危险性质。